Zero-Bias Anomaly in GaAs:Zn Tunnel Junction under Magnetic Field

1994 ◽  
Vol 63 (11) ◽  
pp. 4262-4263 ◽  
Author(s):  
Morio Suzuki
Keyword(s):  
Magnetic Field ◽  
Tunnel Junction ◽  
Zero Bias ◽  
Zero Bias Anomaly

scholarly journals Bistable memory effect in chromium oxide junctions

2002 ◽  
Vol 746 ◽  
Author(s):  
A. Sokolov ◽  
C.-S. Yang ◽  
E. Ovtchenkov ◽  
L. Yuan ◽  
S.-H. Liou ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
External Magnetic Field ◽  
High Speed ◽  
Excitation Pulse ◽  
Zero Field ◽  
Zero Bias ◽  
In Series ◽  
Iv Curves ◽  
Zero Bias Anomaly

ABSTRACTMagnetotransport properties of granular CrO2 /Cr2O3 films made of CrO2 crystals covered by 1– 2 nm native insulating Cr2O3 are presented. Electrical properties of a limited number of grains measured in series and parallel (10 to 15 grains) reveal intergrain tunneling characteristics. At lowest temperatures, a well pronounced zero bias anomaly indicates that impurities in the junctions block the electronic flow.Hysteresis in the IV curves are observed at intermediate temperatures on zero-field cooled samples. Changing the polarity of a short excitation pulse (100ns) of amplitude smaller than 1 V triggers a change in the zero-bias resistance by 10–50%. These states are stable and well reproducible in the temperature interval ranging from 100K to 250K. Applying an external magnetic field cancels the IV hysteresis. The resistance of the devices in the kΩ range, the potential high-speed for writing and reading the resistance sate, make these systems interesting candidates for magnetic non-volatile memories.

STUDY OF THE ANOMALY PHENOMENA FOR THE HYBRID SUPERCONDUCTOR-SEMICONDUCTOR JUNCTIONS

2006 ◽  
Vol 20 (16) ◽  
pp. 2305-2312 ◽  
Author(s):  
ARAFA H. ALY ◽  
J. HONG ◽  
A. H. PHILLIPS
Keyword(s):  
Magnetic Field ◽  
Carrier Concentration ◽  
Bias Voltage ◽  
Chaotic Behavior ◽  
Oscillatory Behavior ◽  
Tunneling Probability ◽  
Wkb Method ◽  
Zero Bias ◽  
The Magnetic Field ◽  
Zero Bias Anomaly

The conductance anomaly behavior for superconductor-semiconductor-superconductor junctions is investigated. We propose a potential profile at the interface which depends on the intrinsic parameters of the junctions, e.g. carrier concentration. The tunneling probability is derived by the WKB method and the corresponding conductance is expressed in terms of the tunneling probability through Landauer–Buttiker formula. The results show a zero-bias anomaly (ZBA) for the dependence of conductance on bias voltage. Also, the oscillatory behavior of the conductance with the magnetic field, due to the chaotic behavior of the junction.

scholarly journals Nonequilibrium Zero-Bias Anomaly in Disordered Metals

2008 ◽  
Vol 100 (8) ◽  
Author(s):  
D. B. Gutman ◽  
Yuval Gefen ◽  
A. D. Mirlin
Keyword(s):  
Zero Bias ◽  
Disordered Metals ◽  
Zero Bias Anomaly
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