On the Magnetic Scattering of Fast Electrons in the Ferromagnetic Crystal

1949 ◽  
Vol 4 (4-6) ◽  
pp. 251-256
Author(s):  
Toshinosuke Muto ◽  
Kenzo Inoue ◽  
Ichie Watanabe
Keyword(s):  
Magnetic Scattering ◽  
Fast Electrons ◽  
Ferromagnetic Crystal

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Suppression of vortex lattice melting in YBCO via irradiation with fast electrons

2019 ◽  
Vol 30 (7) ◽  
pp. 6688-6692
Author(s):  
V. I. Beletskiy ◽  
G. Ya. Khadzhai ◽  
R. V. Vovk ◽  
N. R. Vovk ◽  
A. V. Samoylov ◽  
...  
Keyword(s):  
Vortex Lattice ◽  
Fast Electrons ◽  
Vortex Lattice Melting

scholarly journals A constraint on light primordial black holes from the interstellar medium temperature

2021 ◽  
Author(s):  
Hyungjin Kim
Keyword(s):  
Black Holes ◽  
Dark Matter ◽  
Dwarf Galaxy ◽  
Dark Matter Candidate ◽  
Primordial Black Hole ◽  
Primordial Black Holes ◽  
Substantial Fraction ◽  
Interstellar Gas ◽  
Medium Temperature ◽  
Fast Electrons

Abstract Primordial black holes are a viable dark matter candidate. They decay via Hawking evaporation. Energetic particles from the Hawking radiation interact with interstellar gas, depositing their energy as heat and ionization. For a sufficiently high Hawking temperature, fast electrons produced by black holes deposit a substantial fraction of energy as heat through the Coulomb interaction. Using the dwarf galaxy Leo T, we place an upper bound on the fraction of primordial black hole dark matter. For M < 5 × 10−17M⊙, our bound is competitive with or stronger than other bounds.

The suppression of spin–orbit coupling effect by the ZnO layer of La0.7Sr0.3MnO3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance

Nanoscale ◽  
2021 ◽  
Author(s):  
Bibekananda Das ◽  
Prahallad Padhan
Keyword(s):  
Charge Transfer ◽  
Coupling Effect ◽  
Orbit Coupling ◽  
Negative Magnetoresistance ◽  
Magnetic Scattering ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Interfacial Charge Transfer ◽  
Positive Magnetoresistance ◽  
Interfacial Charge

In Si–La0.7Sr0.3MnO3, the interfacial charge transfer driven strong localized antiferromagnetic and spin–orbit couplings favor positive magnetoresistance, which is suppressed by strong magnetic scattering induced by the top ZnO layer results in negative magnetoresistance.

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