Erratum: “Higher Order Optical Mixing of Raman Laser Light in Nonlinear Dielectric Media”

1965 ◽  
Vol 20 (2) ◽  
pp. 296-296
Author(s):  
Tatsuo Yajima ◽  
Masamoto Takatsuji
Keyword(s):  
Laser Light ◽  
Raman Laser ◽  
Higher Order ◽  
Nonlinear Dielectric ◽  
Dielectric Media ◽  
Optical Mixing

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
R. Kosugi ◽  
Y. Tanaka ◽  
S. Harada ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Higher Order ◽  
Trap Density ◽  
New Technique ◽  
Two Dimensional ◽  
Nonlinear Dielectric ◽  
Annealing Conditions ◽  
Transient Spectroscopy ◽  
A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

scholarly journals Photonic Crystal Waveguide Weakly Interacting with Multiple Off-Channel Resonant Features Formed of Kerr Nonlinear Dielectric Media

2007 ◽  
Vol 2007 ◽  
pp. 1-10 ◽  
Author(s):  
A. R. McGurn
Keyword(s):  
Photonic Crystal ◽  
Coherent Scattering ◽  
Resonant Scattering ◽  
Photonic Crystal Waveguide ◽  
Nonlinear Dielectric ◽  
Resonant Interactions ◽  
Dielectric Media ◽  
Guided Modes ◽  
Relationship Of ◽  
Induced Transparency

A theoretical study is presented of guided modes of a photonic crystal waveguide for cases in which they interact with multiple bound electromagnetic modes localized on off-channel impurity features of Kerr nonlinear media. The interest is on the properties of resonant scattering and optical bistability exhibited by the system and the coherent scattering of the guided modes due to their simultaneous resonant interactions with multiple bound modes. In first study, two off-channel features on opposite sides of a photonic crystal waveguide are made of different Kerr nonlinear dielectric media. In second study, an off-channel feature is composed of two neighboring sites having different Kerr dielectric properties. In addition to numerical results a number of analytical results are presented providing simple explanations of the quantitative behaviors of the systems. A relationship of these systems to forms of electromagnetic-induced transparency and modifications of waveguide dispersion relations is discussed.

Higher Order Nonlinear Dielectric Microscopy

2001 ◽  
Vol 688 ◽  
Author(s):  
Yasuo Cho ◽  
Koya Ohara
Keyword(s):  
Depth Resolution ◽  
Higher Order ◽  
Ferroelectric Materials ◽  
Unit Cell ◽  
Dielectric Constants ◽  
Surface Layers ◽  
Nonlinear Dielectric ◽  
Microscopy Technique ◽  
Cell Thickness

AbstractA higher order nonlinear dielectric microscopy technique with higher lateral and depth resolution than conventional nonlinear dielectric imaging is investigated. The proposed technique involves the measurement of higher order nonlinear dielectric constants, with a depth resolution of down to 1.5 nm. The technique is demonstrated to be very useful for observing surface layers of the order of unit cell thickness on ferroelectric materials.

New Functions of Scanning Nonlinear Dielectric Microscopy –Higher-Order Measurement and Vertical Resolution–

2001 ◽  
Vol 40 (Part 1, No. 5B) ◽  
pp. 3544-3548 ◽  
Author(s):  
Yasuo Cho ◽  
Koya Ohara ◽  
Atsushi Koike ◽  
Hiroyuki Odagawa
Keyword(s):  
Higher Order ◽  
Vertical Resolution ◽  
Nonlinear Dielectric

Nondestructive and Local Evaluation of SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2016 ◽  
Vol 858 ◽  
pp. 469-472 ◽  
Author(s):  
Norimichi Chinone ◽  
R. Kosugi ◽  
Yasunori Tanaka ◽  
Shinsuke Harada ◽  
Hajime Okumura ◽  
...  
Keyword(s):  
High Spatial Resolution ◽  
Interface State ◽  
Higher Order ◽  
State Density ◽  
Strong Correlations ◽  
Interface Quality ◽  
Nonlinear Dielectric ◽  
Spatially Inhomogeneous ◽  
Capacitance Voltage ◽  
Sic Wafer

SiO2/SiC interface was investigated by using super-higher-order (SHO) scanning nonlinear dielectric microscopy (SNDM) with high spatial resolution. Comparison of non-oxidized and thermally oxidized 4H-SiC wafer (Si-face) revealed that only 5 min oxidation makes the interface quality spatially inhomogeneous. Next four SiC wafers treated under different post oxidation annealing (POA) conditions in NO ambient (three “with” and one “without” POA) were also compared. Using SHO-SNDM, local capacitance-voltage (C-V) curves were obtained. The local C-V curve obtained in sample with POA was more close to ideal C-V curve compared to the C-V curves obtained in the sample without POA. In addition, two-dimensional normalized SNDM images taken on the four SiC wafers were observed, which showed that the spatial deviation of interface state was reduced by the POA treatment. Moreover, standard deviations s of the normalized SNDM images were calculated. Then, very strong correlations between σ and interface-state density Dit as well as channel electron mobility μFE were observed.

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