Noise from Ge PN Junction and γ ray Irradiation Effect

1957 ◽  
Vol 12 (4) ◽  
pp. 439-440 ◽  
Author(s):  
Yoshio Inuishi
RADIOISOTOPES ◽  
1970 ◽  
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Shigeo KOBAYASHI ◽  
Kikuo YATABE

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Takumi Chikada ◽  
Jan Engels ◽  
Jumpei Mochizuki ◽  
Seira Horikoshi ◽  
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L. Guerbous ◽  
...  

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W. Z. Shao ◽  
X. P. Hao ◽  
X. Y. Sun ◽  
...  

2001 ◽  
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pp. 255-257 ◽  
Author(s):  
D. Wu ◽  
A.D. Li ◽  
H.Q. Ling ◽  
T. Yu ◽  
Z.G. Liu ◽  
...  

1983 ◽  
Vol 19 (20) ◽  
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Author(s):  
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S. Mitachi ◽  
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T. Miyashita

1997 ◽  
Vol 484 ◽  
Author(s):  
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J. R. Chavez ◽  
W. T. Kemp ◽  
K. Hoenshel ◽  
M. Missous

AbstractIntersubband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied as a function of 1.0 to 5.0 MRad γ-ray irradiation dose using the optical absorption technique. The spectra were recorded at both 295 and 77K. The results show that the total integrated area of the intersubband transition is decreased as the irradiation dose is increased. This could be explained as follows: The secondary electrons generated from the γ-ray irradiation cause lattice damages where traps and point defects are created. Some of the electrons in the quantum wells are trapped by these defects causing the two dimensional electron gas (2DEG) density to decrease. The reduction of the 2DEG density thus leads to the reduction of the total integrated area of the intersubband transitions.


1962 ◽  
Vol 17 (9) ◽  
pp. 1521-1522 ◽  
Author(s):  
Hiroshi Edagawa ◽  
Hajime Ishikawa ◽  
Yoshinori Morita ◽  
Yoshio Inuishi
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