On the Electrical and Thermal Properties of the Ternary Chalcogenides A2IBIVX3, AIBVX2and A3IBVX4(AI=Cu; BIV=Ge, Sn; BV=Sb; X=S, Se, Te). I. Thermoelectric Properties at Room Temperature

1968 ◽  
Vol 7 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Katsumi Hirono ◽  
Masaru Kono ◽  
Taizo Irie
Keyword(s):  
Thermal Properties ◽  
Thermoelectric Properties ◽  
Room Temperature

scholarly journals Impact of the iron substitution on the thermoelectric properties of Co 1− x Fe x S 2 ( x  ≤ 0.30)

2019 ◽  
Vol 377 (2152) ◽  
pp. 20180337 ◽  
Author(s):  
Ulises Acevedo Salas ◽  
Ismail Fourati ◽  
Jean Juraszek ◽  
Fabienne Richomme ◽  
Denis Pelloquin ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Material ◽  
Power Factor ◽  
Room Temperature ◽  
Low Carbon ◽  
Energy Materials ◽  
Work Samples ◽  
Lattice Part

The strong interplay between magnetism and transport can tune the thermoelectric properties in chalcogenides and oxides. In the case of ferromagnetic CoS 2 pyrite, it was previously shown that the power factor is large at room temperature, reaching 1 mW m −1  K −2 and abruptly increases for temperatures below the Curie transition ( T C ), an increase potentially due to a magnonic effect on the Seebeck ( S ) coefficient. The too large thermal conductivity approximately equal to 10.5 W m −1  K −1 at room temperature prevents this pyrite from being a good thermoelectric material. In this work, samples belonging to the Co 1− x Fe x S 2 pyrite family ( x  = 0, 0.15 and 0.30) have thus been investigated in order to modify the thermal properties by the introduction of disorder on the Co site. We show here that the thermal conductivity can indeed be reduced by such a substitution, but that this substitution predominantly induces a reduction of the electronic part of the thermal conductivity and not of the lattice part. Interestingly, the magnonic contribution to S below T C disappears as x increases, while at high T , S tends to a very similar value (close to −42 µV K −1 ) for all the samples investigated. This article is part of a discussion meeting issue ‘Energy materials for a low carbon future’.

Lanthanide Refractory Semiconductors Based on the Th3P4 Structure

1987 ◽  
Vol 97 ◽  
Author(s):  
K. A. Gschneidner ◽  
J. F. Nakahara ◽  
B. J. Beaudry ◽  
T. Takeshita ◽  
Ames Laboratory
Keyword(s):  
Electrical Resistivity ◽  
Thermal Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Type Structure ◽  
Term Stability ◽  
Long Term Stability ◽  
Phase Relationships

ABSTRACTThe phase relationships and the important structural, electrical and thermal properties of the R3X4-R2X3 (where R = lanthanides and X = S, Se and Te) phases having the Th3P4 -type structure are reviewed. The room temperature electrical resistivity and Seebeck coefficient of these materials are independent of R and only slightly dependent on X, but critically dependent on the X:R ratio. The long term stability of these phases is also reviewed. Although these materials have good thermoelectric properties there are some problems which need to be solved before these phases can be utilized in thermoelectric devices. These problems include long term stability, higher than desirable thermal conductivities, and low electron mobilities.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Thermoelectric Properties of Bi-Sb-Te-X Compounds Prepared by MA-PDS Method

2001 ◽  
Vol 691 ◽  
Author(s):  
Yong-Ho Park ◽  
Liu Xue-Dong
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Ag Addition

ABSTRACTA great potential for further improving the room-temperature figure of merit (Z) has been identified by dispersing a small fraction of Ag in the (Bi0.25Sb0.75)2Te3 alloy. The maximum Z of 3.41×10−3K−1, 17% higher than that of the unadded, is attained at 0.02wt% Ag. Addition of BN, either alone or in combination with Ag, however, does not generate a favorable figure of merit.

Electric and thermoelectric properties of CdTe/PbTe epitaxial nanocomposite

2014 ◽  
Vol 07 (06) ◽  
pp. 1440007
Author(s):  
Michal Szot ◽  
Krzysztof Dybko ◽  
Piotr Dziawa ◽  
Leszek Kowalczyk ◽  
Viktor Domukhovski ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Molecular Beam ◽  
High Quality ◽  
Polycrystalline Solid ◽  
Hall Effect Measurements ◽  
Shubnikov De Haas Oscillations

The electric and thermoelectric properties of novel, CdTe / PbTe layered nanocomposite material are investigated. The molecular beam epitaxy (MBE) method was used for preparation of samples with well controlled distances (from 20 to 70 nm) between the layers of CdTe nanograins embedded in PbTe thermoelectric matrix as well as with number of these layers from 2 to 10. The Hall effect measurements performed in temperature range from 4–300 K revealed that carrier mobility is strongly affected by scattering on CdTe grain boundaries. The observation of Shubnikov-de Haas oscillations confirms high quality of the samples and allows determination of effective mass of conducting electrons m* = 0.04m0. The measurements of the room temperature Seebeck coefficient together with electrical conductivity lead to the power factors which are comparable to those reported in PbTe / CdTe polycrystalline solid solutions.

Electrophysical Properties of Iodine Doped Acetylene/Ethylene Copolymers

1993 ◽  
Vol 328 ◽  
Author(s):  
A. N. Aleshin ◽  
E. G. Guk ◽  
V. A. Marikhin ◽  
L. P. Myasnikova ◽  
D. G. Belov
Keyword(s):  
Thermal Properties ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Room Temperature ◽  
Dc Conductivity ◽  
Charge Carrier Transport ◽  
Electrophysical Properties ◽  
Ethylene Copolymers ◽  
Hopping Mechanism ◽  
A Charge

ABSTRACTA new oxydative-resistant, fusible and processible ethylene/acetylene copolymer has been synthesized. The content of rigid (acetylene) and flexible (ethylene) fragments has been widely varied. The structure of the nascent powders and the films compressed at room temperature have been investigated by SEM and WAXS. DSC has been used for studying the thermal properties. DC conductivity of the iodine doped samples has been measured as a function of temperature. It is shown that the doping leads to arising conductivity in the samples even at 10 Mol % acetylene fragments in copolymer. The conductivity up to 10−3 S/cm is reached for the samples with acetylene fragment concentration about 20 Mol %. It is found that a charge carrier transport in investigated copolymers is caused by doped polyacetylene fragments and described by the hopping Mechanism.

Tuning the thermoelectric properties of a single-molecule junction by mechanical stretching

2015 ◽  
Vol 17 (7) ◽  
pp. 5386-5392 ◽  
Author(s):  
Alberto Torres ◽  
Renato B. Pontes ◽  
Antônio J. R. da Silva ◽  
Adalberto Fazzio
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Single Molecule ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Heat Conductance ◽  
Molecule Junction ◽  
Electronic Heat ◽  
Single Molecule Junction ◽  
Mechanical Stretching

We theoretically investigate, as a function of the stretching, the behaviour of the Seebeck coefficient, the electronic heat conductance and the figure of merit of a molecule-based junction composed of a benzene-1,4-dithiolate (BDT) molecule coupled to Au(111) surfaces at room temperature.

Study of thermal properties of Ga0.5In1.5Se3 by differential scanning calorimetry

2021 ◽  
pp. 2150407
Author(s):  
S. I. Ibrahimova
Keyword(s):  
Crystal Structure ◽  
Differential Scanning Calorimetry ◽  
Thermal Properties ◽  
Thermal Effects ◽  
Room Temperature ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Hexagonal Symmetry ◽  
Scanning Calorimetry ◽  
X Ray

The crystal structure and thermal properties of the [Formula: see text] compound have been investigated. Structural studies were performed by X-ray diffraction at room temperature. The crystal structure of this compound was found to correspond to the hexagonal symmetry of the space group P61. Thermal properties were studied using a differential scanning calorimetry (DSC). It was found in the temperature range [Formula: see text] that thermal effects occur at temperatures [Formula: see text] and [Formula: see text]. The thermodynamic parameters of these effects are calculated.

Thermoelectric properties of monolayer GeAsSe and SnSbTe

2020 ◽  
Vol 8 (28) ◽  
pp. 9763-9774
Author(s):  
H. H. Huang ◽  
Xiaofeng Fan ◽  
David J. Singh ◽  
W. T. Zheng
Keyword(s):  
Thermoelectric Properties ◽  
High Power ◽  
Room Temperature ◽  
P Type

With high power factors, monolayer GeAsSe and SnSbTe with p-type doping have large ZT values at room temperature.

Sign in / Sign up

Export Citation Format

Share Document