Side Wall Degradation of Chemically Amplified Resists Based on Poly(4-hydroxystyrene) for Extreme Ultraviolet Lithography

2008 ◽  
Vol 47 (10) ◽  
pp. 7822-7826 ◽  
Author(s):  
Takahiro Kozawa ◽  
Seiichi Tagawa
Keyword(s):  
Extreme Ultraviolet ◽  
Side Wall ◽  
Extreme Ultraviolet Lithography ◽  
Ultraviolet Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resists

Photoacid generator–polymer interaction on the quantum yield of chemically amplified resists for extreme ultraviolet lithography

2018 ◽  
Vol 6 (27) ◽  
pp. 7267-7273 ◽  
Author(s):  
Roberto Fallica ◽  
Yasin Ekinci
Keyword(s):  
Quantum Yield ◽  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Polymer Backbone ◽  
Ultraviolet Lithography ◽  
Chemically Amplified ◽  
Chemically Amplified Resists ◽  
Photoacid Generator ◽  
Polymer Interaction

The rate of photoacid generation is measured experimentally and it is demonstrated to depend on the interaction between polymer backbone and photoacid generator. The clearing volume per absorbed photon and per generated photoacid is also calculated and discussed in view of lithographic resolution and roughness.

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