scholarly journals Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

2006 ◽  
Vol 45 (1A) ◽  
pp. 305-310 ◽  
Author(s):  
Yao-Joe Yang ◽  
Wen-Cheng Kuo ◽  
Kuang-Chao Fan
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Ion Etching ◽  
Inductively Coupled

scholarly journals Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Micromachines ◽  
2021 ◽  
Vol 12 (8) ◽  
pp. 991
Author(s):  
Michael Huff
Keyword(s):  
Aspect Ratio ◽  
Integrated Circuit ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Fused Silica ◽  
Device Fabrication ◽  
Ion Etching ◽  
Aspect Ratios ◽  
Recent Advances

This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

The Control Method of Surface Morphology and Etch Rates for Silicon Etch Process With Extremely Deep and High Aspect Ratio

2016 ◽  
Author(s):  
Tiantong Xu ◽  
Zhi Tao ◽  
Xiao Tan ◽  
Haiwang Li
Keyword(s):  
Aspect Ratio ◽  
Surface Morphology ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Etching Process ◽  
Inductively Coupled ◽  
Passivation Time ◽  
Sidewall Angle ◽  
Total Etching

The manufacture method based on the silicon etching process is one of the most important methods to fabricate micro mechanical structure, e.g. micro-engine. In the processing, the high aspect ratio silicon etch process (HARSE process) is very important to improve the efficiency of structure. At the same time, the surface morphology should be controlled exactly to keep the performance of structure. In this paper, the feasibilities of controlling the surface morphology and Si etch rates were experimentally investigated. In the experiments, the width of structure changes from 15um to 1500um and the depth changes from 50um to 500um. The parameters of surface morphology including sidewall angle, surface roughness, and so on were measured and compared. The influence mechanisms of etching parameters were analyzed. The etching process were completed in a surface technology system (STS) multiplex advanced silicon etcher inductively coupled plasma (ICP) system with SF6/O2 plasma as etching plasma and C4F8 as passivation plasma. In the experiments, the etching experiments were conducted in a low pressure (5–50mTorr), high density, inductively coupled plasma etching reactor (ICP) with a planar coil. The Si etches rates and sidewall angle were investigated as a function of chamber pressure, cathode RF-power, and gas flow. The results indicated that the increasing of total etching time results in an acceleration in etch rate as well as the decrease in sidewall angle (the top width of trench is narrow than the bottom width). Meanwhile, the total passivation time has an opposite effect in the influence of etch rate and sidewall angle. All the experiments indicate that the quick shift between etch and passivation period leads to a smoother surface. An interesting phenomenon were discovered that the etch rate will not change with the changing of width parameter in most of the high aspect ratio silicon etch recipes when the width-depth ratio is upper than 0.34. An experiential function formula were fitted based on four parameters, including width and depth of the structure, and total etching and passivation time.

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

2013 ◽  
Vol 22 (10) ◽  
pp. 106802
Author(s):  
Bo Wang ◽  
Shi-Chen Su ◽  
Miao He ◽  
Hong Chen ◽  
Wen-Bo Wu ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching
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