Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-µm-Wavelength Region Grown on InP Substrates

2005 ◽  
Vol 44 (8) ◽  
pp. 6000-6001 ◽  
Author(s):  
Yuichi Kawamura ◽  
Tomokatsu Nakagawa ◽  
Naohisa Inoue
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Wavelength Region ◽  
Quantum Well Laser ◽  
Inp Substrates

InAsSbN Quantum Well Laser Diodes Operating at 2-µm-Wavelength Region Grown on InP Substrates

2005 ◽  
Vol 44 (No. 35) ◽  
pp. L1112-L1114 ◽  
Author(s):  
Yuichi Kawamura ◽  
Tomokatsu Nakagawa ◽  
Naohisa Inoue
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Wavelength Region ◽  
Quantum Well Laser ◽  
Inp Substrates

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well
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