Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes

2005 ◽  
Vol 44 (4B) ◽  
pp. 2676-2679 ◽  
Author(s):  
Bernard Gelloz ◽  
Takayuki Kanda ◽  
Tetsuya Uchida ◽  
Masao Niibe ◽  
Akira Kojima ◽  
...  
Keyword(s):  
Nanocrystalline Silicon ◽  
Electron Excitation ◽  
Ballistic Electron

A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation

2000 ◽  
Vol 638 ◽  
Author(s):  
Y. Nakajima ◽  
A. Kojima ◽  
N. Koshida
Keyword(s):  
Solid State ◽  
Light Emission ◽  
Nanocrystalline Silicon ◽  
Electron Excitation ◽  
Si Substrate ◽  
Light Emitting ◽  
Direct Excitation ◽  
Ballistic Electron ◽  
Visible Luminescence ◽  
Controlled Structure

AbstractThe concept of a novel solid-state light-emitting device is proposed on a basis of our previous report that the nanocrystalline porous silicon (PS) diode with a well-controlled structure operate as an efficient ballistic electron emitter. This device is composed of a semitransparent thin Au film, a fluorescent thin film, a PS layer, and n-type Si substrate. When a positive bias voltage is applied to the Au electrode, visible luminescence is emitted of which band corresponds to that of the deposited fluorescent material. The optoelectronic characteristics suggest that the light emission is based on direct excitation of fluorescent film by ballistic electrons generated in the PS layer. This result indicates another possibility of nanocrystalline silicon for photonic applications.

Electroluminescence Enhancement Assisted with Ballistic Electron Excitation in Nanocrystalline Silicon Diodes

2004 ◽  
Author(s):  
Bernard Gelloz ◽  
Tetsuya Uchida ◽  
Masao Niibe ◽  
Akira Kojima ◽  
Nobuyoshi Koshida
Keyword(s):  
Nanocrystalline Silicon ◽  
Electron Excitation ◽  
Ballistic Electron

Characteristics of Light Emission by Ballistic Electron Excitation in Nanocrystalline Silicon Device Formed on a p-Type Substrate

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2412-2414 ◽  
Author(s):  
Yoshiki Nakajima ◽  
Hajime Toyama ◽  
Tetsuya Uchida ◽  
Akira Kojima ◽  
Nobuyoshi Koshida
Keyword(s):  
Light Emission ◽  
Nanocrystalline Silicon ◽  
Electron Excitation ◽  
Ballistic Electron ◽  
P Type ◽  
Silicon Device

A solid-state light-emitting device based on ballistic electron excitation using an inorganic material as a fluorescent film

2003 ◽  
Vol 197 (2) ◽  
pp. 316-320 ◽  
Author(s):  
Yoshiki Nakajima ◽  
Hajime Toyama ◽  
Akira Kojima ◽  
Nobuyoshi Koshida
Keyword(s):  
Solid State ◽  
Inorganic Material ◽  
Electron Excitation ◽  
Light Emitting ◽  
Ballistic Electron

scholarly journals Application of Nanocrystalline Silicon and Ballistic Electron Emitter to Flat Panel Display Devices

2003 ◽  
Vol 12 (2) ◽  
pp. 52-56
Author(s):  
Nobuyoshi Koshida ◽  
A. Kojima ◽  
Y. Nakajima ◽  
T. Ichihara ◽  
Y. Watabe ◽  
...  
Keyword(s):  
Nanocrystalline Silicon ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Display Devices ◽  
Electron Emitter ◽  
Ballistic Electron

A Solid-State Multicolor Light-Emitting Device Based on Ballistic Electron Excitation

2004 ◽  
Vol 43 (4B) ◽  
pp. 2076-2079 ◽  
Author(s):  
Yoshiki Nakajima ◽  
Tetsuya Uchida ◽  
Hajime Toyama ◽  
Akira Kojima ◽  
Bernard Gelloz ◽  
...  
Keyword(s):  
Solid State ◽  
Electron Excitation ◽  
Light Emitting ◽  
Ballistic Electron

Influence of X-Ray Induced Fluorescence on Energy Dispersive X-Ray Analysis of Thin Foils

1977 ◽  
Vol 35 ◽  
pp. 328-329
Author(s):  
E. A. Kenik ◽  
J. Bentley
Keyword(s):  
Thin Foil ◽  
Electron Excitation ◽  
Simple Approach ◽  
Foil Thickness ◽  
X Rays ◽  
X Ray ◽  
Hole Spectrum ◽  
Illumination System ◽  
Thin Foils ◽  
Intensity Ratios

Cliff and Lorimer (1) have proposed a simple approach to thin foil x-ray analy sis based on the ratio of x-ray peak intensities. However, there are several experimental pitfalls which must be recognized in obtaining the desired x-ray intensities. Undesirable x-ray induced fluorescence of the specimen can result from various mechanisms and leads to x-ray intensities not characteristic of electron excitation and further results in incorrect intensity ratios.In measuring the x-ray intensity ratio for NiAl as a function of foil thickness, Zaluzec and Fraser (2) found the ratio was not constant for thicknesses where absorption could be neglected. They demonstrated that this effect originated from x-ray induced fluorescence by blocking the beam with lead foil. The primary x-rays arise in the illumination system and result in varying intensity ratios and a finite x-ray spectrum even when the specimen is not intercepting the electron beam, an ‘in-hole’ spectrum. We have developed a second technique for detecting x-ray induced fluorescence based on the magnitude of the ‘in-hole’ spectrum with different filament emission currents and condenser apertures.

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