A Single-Shot Transient-Grating Autocorrelator for the Measurement of Femtosecond Laser Pulses in the Ultraviolet

2004 ◽  
Vol 43 (3) ◽  
pp. 993-996 ◽  
Author(s):  
Katsutoshi Takatoi ◽  
Akira Suda ◽  
Yu Oishi ◽  
Pengqian Wang ◽  
Keigo Nagasaka ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Single Shot ◽  
Transient Grating

Characterization of Electrical Contacts on Silicon (100) after Ablation and Sulfur Doping by Femtosecond Laser Pulses

2013 ◽  
Vol 205-206 ◽  
pp. 358-363 ◽  
Author(s):  
Philipp Saring ◽  
Anna Lena Baumann ◽  
Stefan Kontermann ◽  
Wolfgang Schade ◽  
Michael Seibt
Keyword(s):  
Surface Roughness ◽  
Femtosecond Laser ◽  
Laser Pulses ◽  
Sample Surface ◽  
Femtosecond Laser Pulses ◽  
Electrical Contacts ◽  
Single Shot ◽  
Excess Charge ◽  
Silicon Sample ◽  
Etching Depth

This paper investigates the influence of different number of laser pulses on contact behavior and conductivity of the surface layer of femtosecond laser microstructured, sulfur-doped silicon. Single shot laser processed silicon (Pink Silicon) is characterized by low surface roughness, whereas five shot laser processed silicon (Grey Silicon) has an elevated sulfur content with a surface roughness low enough to maintain good contacting. To laterally confine the laser induced pn-junction part of the Grey Silicon sample surface is etched off. The etching depth is confirmed to be sufficient to completely remove the active n-type sulfur layer. While Pink Silicon shows little or no lateral conductivity within the laser processed layer, Grey Silicon offers acceptable conductivity, just as expected by the fact of having incorporated a higher sulfur dopant content. Recombination dominates the irradiated regions of Pink Silicon and suppresses excess charge carrier collection. Grey Silicon, while showing sufficient lateral conductivity, still shows regions of lower conductivity, most likely dominated by the laser irradiation-induced formation of dislocations. According to our results, the optimum laser pulse number for electrical and structural properties is expected to be in the range between one and five laser pulses.

Laser Ion Kinetics: Dynamics of Intramolecular Reactions in Substituted Benzalacetones

2000 ◽  
Vol 6 (2) ◽  
pp. 143-152 ◽  
Author(s):  
R. Heinicke ◽  
C. Grun ◽  
J. Grotemeyer
Keyword(s):  
Femtosecond Laser ◽  
Mass Spectrometer ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Photon Absorption ◽  
Single Shot ◽  
Pump Probe ◽  
Intramolecular Reactions ◽  
The Stability ◽  
Fragmentation Processes

Measurements of a single shot femtosecond laser pump-probe technique on substituted benzalacetones are reported. The technique is based on counter propagating femtosecond laser pulses in a supersonic beam of low density of sample molecules and simultaneous probe detection by ion or fragment ion formation through a reflectron time-of-flight mass spectrometer. It will be shown that the range of the pump-probe delays covers the time span between 100 fs and 10 ps depending on the pulse width of the laser used and the stability of the voltages of the mass spectrometer. The application of this technique to medium-sized organic molecules reveals some insight into the electron transfer process during ionisation through a 1 + 1 multi-photon absorption procedure. Furthermore it is demonstrated that this technique is also applicable to the investigation of ultra-fast isomerisation and fragmentation processes.

Single-shot B-integral wave-front correction of femtosecond laser pulses

1998 ◽  
Author(s):  
F. Druon ◽  
M. Nantel ◽  
G. Vdovin ◽  
A. Maksimshuk ◽  
J.C. Chanteloup ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Wave Front ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Single Shot
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