Hillock Generation on Au Metal in GaAs Metal Semiconductor Field Effect Transistor Fabrication

2003 ◽  
Vol 42 (Part 2, No. 11A) ◽  
pp. L1305-L1307
Author(s):  
Yoshihiro Saito ◽  
Shigeru Nakajima
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Transistor Fabrication

High-yield GaN nanowire synthesis and field-effect transistor fabrication

2006 ◽  
Vol 35 (4) ◽  
pp. 670-674 ◽  
Author(s):  
Huaqiang Wu ◽  
Ho-Young Cha ◽  
M. Chandrashekhar ◽  
Michael G. Spencer ◽  
Goutam Koley
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Gan Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

Synthesis and Characterization of Anthracene Derivative for Organic Field-Effect Transistor Fabrication

2012 ◽  
Vol 12 (5) ◽  
pp. 4269-4273 ◽  
Author(s):  
Pramod Kandoth Madathil ◽  
Jae-Geon Lim ◽  
Tae-Dong Kim ◽  
Dirk Beckmann ◽  
Alexey Mavrinskiy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Synthesis And Characterization ◽  
Organic Field Effect Transistor ◽  
Anthracene Derivative ◽  
Effect Transistor ◽  
Transistor Fabrication

High-yield TiO2 nanowire synthesis and single nanowire field-effect transistor fabrication

2008 ◽  
Vol 92 (24) ◽  
pp. 242111 ◽  
Author(s):  
Jeong Min Baik ◽  
Myung Hwa Kim ◽  
Christopher Larson ◽  
Xihong Chen ◽  
Shujing Guo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Single Nanowire ◽  
Tio2 Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

Air Stable High Resolution OFET (Organic Field Effect Transistor) Fabrication Using Inkjet Printing and Low Temperature Selective Laser Sintering Process

2006 ◽  
Author(s):  
Seung Hwan Ko ◽  
Heng Pan ◽  
Costas P. Grigoropoulos ◽  
Dimos Poulikakos
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Nano Particles ◽  
Organic Field Effect Transistor ◽  
Effect Transistor ◽  
Gold Nano Particles ◽  
Transistor Fabrication

A novel high resolution OFET (organic field effect transistor) fabrication process has been developed to realize low cost, large area electronics at low processing temperature without use of expensive, high temperature lithography process in vacuum. A drop-on-demand (DOD) ink-jetting system was used to print gold nano-particles suspended in Alpha-Terpineol solvent. Continuous Argon ion laser was irradiated locally to evaporate carrier solvent as well as sinter gold nano-particles in order to fabricate metal source and drain electrodes with high resolution and minimal thermal damage to the substrate. PVP (poly-4-vinylphenol) in Hexanol solvent and air-stable semiconductor polymer (Carboxulate - functionalized Polythiophenes) in 1,2-dichlorobenzene (o-DCB) solvent were spin-coated to form thin film of dielectric layer and semiconducting active layer. All of the processes were carried out in plastic-compatible low temperature, ambient air and atmospheric pressure environment. The OFETs showed good accumulation mode p-channel transistor behavior with carrier mobility of 0.01cm2/V·s and Ion/Ioff ratio of ranging from 103 to 104.

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