Theory of Artificial Atoms and Molecules using Semiconductor Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 366-371 ◽  
Author(s):  
Kiyoshi Kawamura ◽  
Mikio Eto
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Artificial Atoms ◽  
Atoms And Molecules

Transport in Quantum Dots: Observation of Atomlike Properties

MRS Bulletin ◽  
1998 ◽  
Vol 23 (2) ◽  
pp. 49-53 ◽  
Author(s):  
Seigo Tarucha
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Ionization Energy ◽  
Resonant Tunneling ◽  
Semiconductor Quantum Dots ◽  
Coulomb Interactions ◽  
Artificial Atoms ◽  
Large Maximum ◽  
Tunneling Devices ◽  
Resonant Tunneling Devices

Recent advances in nanofabrication technologies have enabled us to fabricate semiconductor quantum dots in which electrons are three-dimensionally confined. These quantum dots are often referred to as artificial atoms since their electronic properties—for example the ionization energy and discrete excitation spectrum—resemble those of real atoms. Electrons bound to a nucleus potential encounter sufficiently strong effects of quantum-mechanical confinement and mutual Coulomb interactions that they are well arranged in ordered states, and this leads to the arrangement of atoms in the periodic table. It is well known in atom physics that the threedimensional spherically symmetric potential around atoms gives rise to the shell structure 1s, 2s, 2p, 3s, 3p,…. The ionization energy has a large maximum for atomic numbers 2, 10, 18,…. Up to atomic number 23, these shells are filled sequentially. Hund's rule determines whether a spin-down or a spin-up electron is added. This article describes how closely we can approach the electronic properties of real atoms through the use of semiconductor quantum dots.Both the effects of quantum confinement and Coulomb interaction become strong in quantum dots when the dot size is comparable to the electron wavelength and contains just a few electrons. The consequence of these factors on transport have only recently been studied in vertical-dot devices, which contain a dot located between source and drain contacts by means of heterostructure tunnel barriers because the few-electron regime is only accessible in the vertical-dot device. Studies include transport measurements through submicron resonant tunneling devices and submicron gated resonant-tunneling devices, and capacitance measurements on submicron double-barrier structures. However quantum-dot devices usually contain some disorder—for instance because of impurities or when the shape of the dot is irregular—which readily causes sample specific inhomogeneity in the electronic properties. Clean quantum dots, in the form of regular disks, have only recently been fabricated in a semiconductor heterostructure (Figure 1), and have been used to study the atomlike properties of artificial atoms.

Semiconductor Quantum Dots for Multicolor Fluorescence Imaging and Spectroscopy of Single Cancer Cells

2003 ◽  
Vol 773 ◽  
Author(s):  
Xiaohu Gao ◽  
Shuming Nie ◽  
Wallace H. Coulter
Keyword(s):  
Quantum Dots ◽  
Cancer Cells ◽  
Fluorescence Imaging ◽  
Organic Dyes ◽  
Fluorescent Proteins ◽  
Single Cells ◽  
Quantitative Imaging ◽  
Semiconductor Quantum Dots ◽  
Single Cancer ◽  
Imaging And Spectroscopy

AbstractLuminescent quantum dots (QDs) are emerging as a new class of biological labels with unique properties and applications that are not available from traditional organic dyes and fluorescent proteins. Here we report new developments in using semiconductor quantum dots for quantitative imaging and spectroscopy of single cancer cells. We show that both live and fixed cells can be labeled with multicolor QDs, and that single cells can be analyzed by fluorescence imaging and wavelength-resolved spectroscopy. These results raise new possibilities in cancer imaging, molecular profiling, and disease staging.

Hot Topic and Challenge of Semiconductor Quantum Dots as Fluorescence Labels*

2010 ◽  
Vol 37 (1) ◽  
pp. 103-110 ◽  
Author(s):  
Chang-Yan LI ◽  
Qian LI ◽  
Hai-Tao LIU ◽  
Jun ZHANG ◽  
DAMIRIN Aletangaole
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots

scholarly journals Magneto-optics of layers of semiconductor quantum dots and nano-rings

2006 ◽  
Vol 36 (2a) ◽  
pp. 383-386
Author(s):  
O. Voskoboynikov ◽  
C. M. J. Wijers ◽  
J. L. Liu ◽  
C. P. Lee
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots

scholarly journals Photoluminescence of CuInS2-based semiconductor quantum dots; Its origin and the effect of ZnS coating

2009 ◽  
Vol 165 ◽  
pp. 012028 ◽  
Author(s):  
Katsuhiro Nose ◽  
Naoya Fujita ◽  
Takahisa Omata ◽  
Shinya Otsuka-Yao-Matsuo ◽  
Wataru Kato ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots
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