Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance–Voltage Method

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 435-439
Author(s):  
Hidenori Deki ◽  
Kouji Nakagawa ◽  
Atsushi Kohno ◽  
Seiichi Miyazaki ◽  
Masataka Hirose
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Capacitance Voltage ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Gap State

Properties of Catalytic-Cvd Amorphous Silicon-Germanium (a-SiGe:H)

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Characteristic Energy ◽  
Optical Band Gaps ◽  
Spin Resonance ◽  
Amorphous Silicon Germanium ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).

Sign in / Sign up

Export Citation Format

Share Document