Near-Band-Edge Photoluminescence of GaAs Epitaxial Layers Grown at Low Temperature

1997 ◽  
Vol 36 (Part 1, No. 2) ◽  
pp. 623-628 ◽  
Author(s):  
Hajime Abe ◽  
Shin-ichi Nakashima ◽  
Hiroshi Harima
Keyword(s):  
Low Temperature ◽  
Band Edge ◽  
Near Band Edge ◽  
Epitaxial Layers

scholarly journals Low temperature near band edge recombination dynamics in ZnO nanorods

2014 ◽  
Vol 116 (12) ◽  
pp. 123506 ◽  
Author(s):  
Z. N. Urgessa ◽  
J. R. Botha ◽  
M. O. Eriksson ◽  
C. M. Mbulanga ◽  
S. R. Dobson ◽  
...  
Keyword(s):  
Low Temperature ◽  
Zno Nanorods ◽  
Band Edge ◽  
Near Band Edge ◽  
Recombination Dynamics

Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

2004 ◽  
Vol 69 (11) ◽  
Author(s):  
B. Arnaudov ◽  
T. Paskova ◽  
P. P. Paskov ◽  
B. Magnusson ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Emission Spectra ◽  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Epitaxial Layers ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Energy Position

Near Band Edge Emission of ZnSxSe1−x Epitaxial Layers on GaP

1987 ◽  
Vol 103 (2) ◽  
pp. 619-629 ◽  
Author(s):  
J. Zhou ◽  
H. Goto ◽  
N. Sawaki ◽  
I. Akasaki
Keyword(s):  
Band Edge ◽  
Near Band Edge Emission ◽  
Near Band Edge ◽  
Epitaxial Layers ◽  
Band Edge Emission ◽  
Edge Emission

Photoluminescence and Photoacoüstic Spectroscopy of Si Single-and Multi-Step Ingot- and Wafer-Annealed GaAs Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
O. Ka ◽  
O. Oda ◽  
S. Shigetomi ◽  
T. Ikari ◽  
Y. Makita ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoacoustic Spectroscopy ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Defect Density ◽  
Band Edge ◽  
Near Band Edge ◽  
Exciton Recombination ◽  
Additional Defect ◽  
Neutral Acceptor

ABSTRACTSI GaAs crystals submitted to single- or multi-step, ingot-or wafer-annealing are investigated using photoluminescence (PL) and photoacoustic spectroscopy (PA). The near-band-edge PL transitions are well resolved, with a neutral acceptor-bound exciton recombination displayed as a split doublet. The improvement induced by wafer-annealing is illustrated by the absence of additional defect-related transitions found after ingot-annealing. For the room temperature PA measurements, the intensity of a peak occuring at 1.39 eV is shown to lead to an estimation of the arsenic micro-defect density as evaluated by AB etching. The 1.39 eV PA band is also asserted to be the non-radiative recombination path of a 1.482 eV band found in the low-temperature PL spectra.

Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature

2006 ◽  
Vol 67 (11) ◽  
pp. 2376-2381 ◽  
Author(s):  
Fu Hai Su ◽  
Wen Jie Wang ◽  
Kun Ding ◽  
Guo Hua Li ◽  
Yuangfang Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Pressure Dependence ◽  
Band Edge ◽  
Near Band Edge

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation
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