scholarly journals Improvement of Electronic Transport Characteristics of Amorphous Silicon by Hydrogen Dilution of Silane

1995 ◽  
Vol 34 (Part 1, No. 6A) ◽  
pp. 3012-3018 ◽  
Author(s):  
Ali Mireshghi ◽  
Hyoung-Koo Lee ◽  
Wan-Shick Hong ◽  
John S. Drewery ◽  
Tao Jing ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Electronic Transport ◽  
Hydrogen Dilution

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Selenium Concentration ◽  
Alloy Film ◽  
Dark Conductivity ◽  
Flow Rate Ratio ◽  
Selenium Atom ◽  
Alloy Films ◽  
Hydrogen Dilution ◽  
Photo Response

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

The influence of spin defects on recombination and electronic transport in amorphous silicon

1980 ◽  
Vol 41 (2) ◽  
pp. 127-140 ◽  
Author(s):  
U. Voget-Grote ◽  
W. Kümmerle ◽  
R. Fischer ◽  
J. Stuke
Keyword(s):  
Amorphous Silicon ◽  
Electronic Transport

Correlation between film and cell properties for DC plasma deposited amorphous silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Jennifer Heath ◽  
Suman B. Iyer ◽  
Yoram Lubianiker ◽  
J. David Cohen ◽  
Gautam Ganguly
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Silicon Film ◽  
Device Performance ◽  
Solar Cell Device ◽  
Film Properties ◽  
Dc Plasma ◽  
Hydrogen Dilution ◽  
Photocurrent Spectroscopy

ABSTRACTWe have carried out measurements to try to correlate amorphous silicon film properties with companion solar cell device performance. The dc plasma deposited intrinsic films were prepared with various hydrogen dilution levels, and increasing power levels to increase growth rate. The electronic properties were determined using admittance spectroscopy and drive-level capacitance profiling (DLCP) techniques as well as transient photocapacitance and photocurrent spectroscopy. Cell and film performance were explored in both as-grown and light-soaked states. We observed that, although cell performance decreased systematiclly with increasing growth rate, it depended on factors other than the deep defect density in the matched films. On the other hand, we did observe that increases in defect density caused by the light-induced degradation led to fairly predictable decreases in the cell fill factors.

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