Preparation of Ferroelectric Bi4Ti3O12 Thin Films with c-Axis Orientation by Atmospheric-Pressure Metal-Organic Chemical Vapor Deposition

1995 ◽  
Vol 34 (Part 1, No. 5A) ◽  
pp. 2425-2429 ◽  
Author(s):  
Kuniaki Yoshimura ◽  
Minoru Ishinabe ◽  
Soichiro Okamura ◽  
Takeyo Tsukamoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

Effect of the substrate on the properties of ZnO–MgO thin films grown by atmospheric pressure metal-organic chemical vapor deposition

2011 ◽  
Vol 519 (18) ◽  
pp. 6044-6052 ◽  
Author(s):  
A.M. Torres-Huerta ◽  
M.A. Domínguez-Crespo ◽  
S.B. Brachetti-Sibaja ◽  
J. Arenas-Alatorre ◽  
A. Rodríguez-Pulido
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Smooth surface of Bi-Sr-Ca-Cu-O thin films on the Y3Al5O12 (YAG) substrate

1994 ◽  
Vol 9 (5) ◽  
pp. 1104-1111 ◽  
Author(s):  
Nobuhiko Kubota ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We prepared the superconducting Bi-Sr-Ca-Cu-O thin films on Y3Al5O12 (YAG) single crystal substrates by metal-organic chemical vapor deposition (MOCVD). This film of 50 nm thickness on a YAG substrate showed c-axis orientation clearly, and the zero-resistivity (Tc-zero) was achieved at 66 K. The film has the advantageous property of surface smoothness compared with the film fabricated on MgO and SrTiO3 single-crystal substrates. The surface property of the YAG substrate seems to influence the film quality.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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