Determination of the Type of Ferroelectric Domain Nucleated around the Dislocation by the Mechanism of Domain Wall Nucleation

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 522-527 ◽  
Author(s):  
S. G. Ingle ◽  
J. G. Dupare
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain

scholarly journals Ferroelectric domain wall phonon polarizer

2017 ◽  
Vol 1 (5) ◽  
Author(s):  
Miquel Royo ◽  
Carlos Escorihuela-Sayalero ◽  
Jorge Íñiguez ◽  
Riccardo Rurali
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain

Determination of Intrinsic Magnetic Parameters of SmCo5 Phase in Sintered Samples

2005 ◽  
Vol 498-499 ◽  
pp. 129-133 ◽  
Author(s):  
Marcos Flavio de Campos ◽  
Fernando José Gomes Landgraf
Keyword(s):  
Powder Metallurgy ◽  
Domain Wall ◽  
Kerr Effect ◽  
Critical Diameter ◽  
Optical Microscope ◽  
Domain Theory ◽  
Magnetic Domains ◽  
Magnetic Parameters ◽  
Intrinsic Parameters

SmCo5 magnets are usually produced by powder metallurgy route, including milling, compaction and orientation under magnetic field, sintering and heat treatment. The samples produced by powder metallurgy, with grain size around 10 μm, are ideal for determination of intrinsic parameters. The first step for determination of intrinsic magnetic parameters is obtaining images of domain structure in demagnetized samples. In the present study, the domain images were produced by means of Kerr effect, in a optical microscope. After the test of several etchings, Nital appears as the most appropriate for observation of magnetic domains by Kerr effect. Applying Stereology and Domain Theory, several intrinsic parameters of SmCo5 phase were determined: domain wall energy 120 erg/cm2, critical diameter for single domain particle size 2 μm and domain wall thickness 60 Å. In the case of SmCo5, and also other phases with high magnetocrystalline anisotropy, Domain Theory presents several advantages when compared with Micromagnetics.

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

Ferroelectric domain wall relaxation in Ba0.25Sr0.75TiO3 films displaying Curie-Weiss behavior

2004 ◽  
Vol 96 (8) ◽  
pp. 4392-4399 ◽  
Author(s):  
Yu. A. Boikov ◽  
K. Khamchane ◽  
T. Claeson
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Wall Relaxation
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