Dynamic Mechanism of Fast Switching in Light Valve Using Liquid Crystal

1985 ◽  
Vol 24 (Part 1, No. 8) ◽  
pp. 905-908 ◽  
Author(s):  
Akihiko Sugimura ◽  
Takao Kawamura
2008 ◽  
Vol 2008 ◽  
pp. 1-52 ◽  
Author(s):  
Y. J. Liu ◽  
X. W. Sun

By combining polymer-dispersed liquid crystal (PDLC) and holography, holographic PDLC (H-PDLC) has emerged as a new composite material for switchable or tunable optical devices. Generally, H-PDLC structures are created in a liquid crystal cell filled with polymer-dispersed liquid crystal materials by recording the interference pattern generated by two or more coherent laser beams which is a fast and single-step fabrication. With a relatively ideal phase separation between liquid crystals and polymers, periodic refractive index profile is formed in the cell and thus light can be diffracted. Under a suitable electric field, the light diffraction behavior disappears due to the index matching between liquid crystals and polymers. H-PDLCs show a fast switching time due to the small size of the liquid crystal droplets. So far, H-PDLCs have been applied in many promising applications in photonics, such as flat panel displays, switchable gratings, switchable lasers, switchable microlenses, and switchable photonic crystals. In this paper, we review the current state-of-the-art of H-PDLCs including the materials used to date, the grating formation dynamics and simulations, the optimization of electro-optical properties, the photonic applications, and the issues existed in H-PDLCs.


2008 ◽  
Vol 139 ◽  
pp. 012010
Author(s):  
Jean Pierre Huignard ◽  
Arnaud Brignon ◽  
Bastien Steinhausser

1991 ◽  
Vol 219 ◽  
Author(s):  
T. Horikawa ◽  
S. Tahata ◽  
S. Kaho ◽  
T. Masumi ◽  
N. Mikami ◽  
...  

ABSTRACTA new type of ferroelectric liquid crystal light valve (FLCLV) is presented. The design of the FLCLV is based upon the linear equivalent circuit analyses. A photosensor in the FLCLV consists of a metal-insulator-semiconductor (MIS) photodiode. A-Si:H doped with boron and nitrogen [a-Si:(:N:B)] is used in the MIS diode. The a-Si:H(:B:N) film has a dark-conductivity of less than 1×1012 S/cm and a high photosensitivity.Consequently, the writing characteristics of the FLCLV for a two dimensional (2D) image are evaluated. Using writing light of 630 nm and 1 mW/cm2, a high resolution capability of 120∼140 1p/mm is obtained.


2014 ◽  
Vol 104 (9) ◽  
pp. 091116 ◽  
Author(s):  
Ji-Liang Zhu ◽  
Shui-Bin Ni ◽  
Chao Ping Chen ◽  
Dong-Qing Wu ◽  
Xiao-Long Song ◽  
...  

2010 ◽  
Vol 96 (7) ◽  
pp. 071104 ◽  
Author(s):  
Armando Piccardi ◽  
Alessandro Alberucci ◽  
Umberto Bortolozzo ◽  
Stefania Residori ◽  
Gaetano Assanto
Keyword(s):  

1985 ◽  
Author(s):  
Ronald S. Gold ◽  
Arno G. Ledebuhr

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