Effect of Compensation on Phonon Coupling with Shallow Donor-Acceptor Pair Recombination inp-Type GaP

1971 ◽  
Vol 10 (4) ◽  
pp. 511-511
Author(s):  
Yoshitaka Furukawa ◽  
Genzo Iwane
Keyword(s):  
Shallow Donor ◽  
Phonon Coupling ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped AlxGa1−xN:Si layers with Al contentx> 0.5

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB27 ◽  
Author(s):  
Igor V. Osinnykh ◽  
Timur V. Malin ◽  
Denis S. Milakhin ◽  
Viktor F. Plyusnin ◽  
Konstantin S. Zhuravlev
Keyword(s):  
Phonon Coupling ◽  
Acceptor Pair ◽  
Strong Electron ◽  
Electron Phonon Coupling ◽  
Donor Acceptor ◽  
Heavily Doped ◽  
Donor Acceptor Pair

Electron-phonon coupling in donor-acceptor pair recombination in CdSe

1974 ◽  
Vol 15 (11-12) ◽  
pp. 1749-1752 ◽  
Author(s):  
S.P. Cruz Filho ◽  
N. Jannuzzi ◽  
E.A. Farah ◽  
R.C.C. Leite
Keyword(s):  
Phonon Coupling ◽  
Acceptor Pair ◽  
Electron Phonon Coupling ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

The kinetics of donor-acceptor pair transitions with strong phonon coupling in GaP

1974 ◽  
Vol 9 (3) ◽  
pp. 180-211 ◽  
Author(s):  
A.T. Vink ◽  
R.L.A. van der Heijden ◽  
A.C. van Amstel
Keyword(s):  
Phonon Coupling ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Kinetics Of

High quantum efficiency of photoluminescence in GaN and ZnO

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael A. Reshchikov ◽  
Xing Gu ◽  
Bill Nemeth ◽  
Jeff Nause ◽  
Hadis Morkoç
Keyword(s):  
Quantum Efficiency ◽  
Molecular Beam ◽  
Shallow Donor ◽  
Nonradiative Recombination ◽  
Acceptor Pair ◽  
High Quantum Efficiency ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair ◽  
Zno Crystal

AbstractThe quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

Structural and Optical Characterization of CuxGaySe2Thin Films under Excitation with Above and Below Band Gap Laser Light

2002 ◽  
Vol 730 ◽  
Author(s):  
C. Xue ◽  
D. Papadimitriou ◽  
Y.S. Raptis ◽  
T. Riedle ◽  
N. Esser ◽  
...  
Keyword(s):  
Band Gap ◽  
Raman Spectra ◽  
Laser Light ◽  
Film Surface ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

AbstractCuxGaySe2MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

Photoluminescence Study of Damage Introduced in GaN by Ar- and Kr-Plasmas Etching

2011 ◽  
Vol 1396 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Retsuo Kawakami ◽  
Masahito Niibe ◽  
Atsushi Takeichi ◽  
Takeshi Inaoka ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Luminescence Band ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Near Surface ◽  
Photoluminescence Study ◽  
Damage Characteristics ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
Blue Luminescence Band

ABSTRACTWe investigated, by employing a photoluminescence technique, the etching damage introduced in near-surface regions of GaN by Ar and Kr plasmas and clarified the differences between the damage characteristics of these regions for the two plasma etching cases. For Ar plasma, the shallow donor-acceptor pair emission at ~3.28 eV was significantly weakened; additionally, a broad blue luminescence band arose at approximately ~3.0 eV. In contrast, for Kr plasma under high gas pressure, we found the recovery of the damage to the same level as the as-grown crystallinity. These differences in the damage characteristics for the two plasma etching cases probably depend upon which atom (N or Ga) is preferentially etched in these cases.

Sign in / Sign up

Export Citation Format

Share Document