High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal–Oxide–Semiconductor Inverters Realized by Controlling Interface Charges

2010 ◽  
Vol 3 (10) ◽  
pp. 105102 ◽  
Author(s):  
Naoki Moriyama ◽  
Yutaka Ohno ◽  
Kosuke Suzuki ◽  
Shigeru Kishimoto ◽  
Takashi Mizutani
Keyword(s):  
Carbon Nanotube ◽  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Charges

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

scholarly journals A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultra Low Power

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

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