High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

2008 ◽  
Vol 1 ◽  
pp. 072201 ◽  
Author(s):  
Kuniyoshi Okamoto ◽  
Taketoshi Tanaka ◽  
Masashi Kubota
Keyword(s):  
Gallium Nitride ◽  
High Efficiency ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Continuous Wave Operation

Continuous-wave operation of ZnMgSSe based blue-green laser diodes under high temperature and high output power

1994 ◽  
Vol 30 (7) ◽  
pp. 568-570 ◽  
Author(s):  
N. Nakayama ◽  
M. Ozawa ◽  
T. Ohata ◽  
A. Ishibashi ◽  
S. Itoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
High Output Power ◽  
Continuous Wave Operation ◽  
High Output

High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes

2012 ◽  
Vol 5 (6) ◽  
pp. 062101 ◽  
Author(s):  
Sumiko Fujisaki ◽  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Shigehisa Tanaka ◽  
Shinji Tsuji ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Green Laser ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Continuous Wave Operation

Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

2007 ◽  
Vol 1 (1) ◽  
pp. 011102 ◽  
Author(s):  
Masashi Kubota ◽  
Kuniyoshi Okamoto ◽  
Taketoshi Tanaka ◽  
Hiroaki Ohta
Keyword(s):  
Gallium Nitride ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Blue Laser ◽  
Continuous Wave Operation

545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density

2010 ◽  
Vol 3 (9) ◽  
pp. 091201 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Haruhiko Kuwatsuka ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Threshold Current Density ◽  
Continuous Wave Operation ◽  
Low Threshold

1.42 [micro sign]m continuous-wave operation of GaInNAs laser diodes

2003 ◽  
Vol 39 (10) ◽  
pp. 777 ◽  
Author(s):  
D. Gollub ◽  
S. Moses ◽  
M. Fischer ◽  
A. Forchel
Keyword(s):  
Continuous Wave ◽  
Laser Diodes ◽  
Continuous Wave Operation

scholarly journals High-Efficiency Intracavity Continuous-Wave Green-Light Generation by Quasiphase Matching in a Bulk Periodically Poled MgO:LiNbO3 Crystal

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Shaowei Chu ◽  
Ying Zhang ◽  
Bin Wang ◽  
Yong Bi
Keyword(s):  
High Efficiency ◽  
Continuous Wave ◽  
Green Light ◽  
Frequency Doubling ◽  
Green Laser ◽  
Periodically Poled ◽  
Output Stability ◽  
532 Nm ◽  
Better Than ◽  
Quasiphase Matching

908 mW of green light at 532 nm were generated by intracavity quasiphase matching in a bulk periodically poled MgO:LiNbO3 (PPMgLN) crystal. A maximum optical-to-optical conversion efficiency of 33.5% was obtained from a 0.5 mm thick, 10 mm long, and 5 mol% MgO:LiNbO3 crystal with an end-pump power of 2.7 W at 808 nm. The temperature bandwidth between the intracavity and single-pass frequency doubling was found to be different for the PPMgLN. Reliability and stability of the green laser were evaluated. It was found that for continuous operation of 100 hours, the output stability was better than 97.5% and no optical damage was observed.

InGaN/GaN/AiGaN-Based Laser Diodes with an Estimated Lifetime of Longer than 10,000 Hours

1997 ◽  
Vol 482 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
Optical Feedback ◽  
Laser Diodes ◽  
Continuous Wave Operation ◽  
Operating Current ◽  
Strained Layer Superlattice ◽  
Cladding Layers ◽  
Multi Quantum Well ◽  
Structure Laser

AbstractInGaN multi-quantum-well (MQW) structure laser diodes with A10.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10,000 hours under continuous-wave operation at 20°C. Under operation at a high temperature of 50°C, the lifetime was longer than 1,000 hours. The activation energy of the lifetime was estimated to be 0.5 eV. With the operating current increasing above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The relative intensity noise (RIN) less than -145 dB/Hz was obtained even at the 6% optical feedback using the high-frequency modulation of 600 MHz. The threshold carrier density of the InGaN MQW-structure LDs was estimated to be 3 × 1019/cm3 using a carrier lifetime of 1.8 ns.

High-efficiency blue and green laser diodes for laser displays

2019 ◽  
Author(s):  
Yoshitaka Nakatsu ◽  
Yoji Nagao ◽  
Kazuma Kozuru ◽  
Tsuyoshi Hirao ◽  
Eiichiro Okahisa ◽  
...  
Keyword(s):  
High Efficiency ◽  
Laser Diodes ◽  
Green Laser

Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature

2011 ◽  
Vol 4 (8) ◽  
pp. 082102 ◽  
Author(s):  
Jun-ichi Kasai ◽  
Ryouichi Akimoto ◽  
Toshifumi Hasama ◽  
Hiroshi Ishikawa ◽  
Sumiko Fujisaki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Continuous Wave Operation
Sign in / Sign up

Export Citation Format

Share Document