SIMULATION AND MODELLING OF FLOWS BETWEEN ROTATING CYLINDERS.

2000 ◽  
Vol 10 (01) ◽  
pp. 73-83 ◽  
Author(s):  
L. M. DE SOCIO ◽  
L. MARINO

The equations which govern a number of models for flows between rotating cylinders at different Knudsen numbers are solved numerically by means of the direct simulation Monte Carlo method (DSMCM) to show their limitations. The DSMC code was firstly tested and validated against existing experimental data and then its results represented the reference data base for evaluating the characteristics of each model.

1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.


2014 ◽  
Vol 342 (10-11) ◽  
pp. 662-670 ◽  
Author(s):  
Claus-Dieter Munz ◽  
Monika Auweter-Kurtz ◽  
Stefanos Fasoulas ◽  
Asim Mirza ◽  
Philip Ortwein ◽  
...  

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