KINETICS OF CARRIER-INDUCED METASTABLE DEFECT FORMATION IN HYDROGENATED AMORPHOUS SILICON

1989 ◽  
pp. 247-295 ◽  
Author(s):  
Warren B. Jackson ◽  
James Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Defect Formation ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Metastable Defect

Bonded Hydrogen Atom Participation in Metastable Defect Formation in Hydrogenated Amorphous Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
G. Lucovsky ◽  
H. Yang
Keyword(s):  
Hydrogen Atom ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Defect Formation ◽  
Hydrogenated Amorphous Silicon ◽  
Reaction Pathways ◽  
Reaction Barriers ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTThis paper proposes intrinsic reaction pathways for generation of metastable defects in hydrogenated undoped or intrinsic amorphous silicon (i-a-Si:H). Since these pathways involve only silicon (Si) and hydrogen (H) atoms, this approach is valid for device grade materials in which concentrations of oxygen (0) atoms, and nitrogen-hydrogen (N-H) groups are present at concentrations below about 1019 cm−3. Ab initio calculations demonstrate that the proposed generation pathway reactions are exothermic with relatively small reaction barriers (< 0.4 eV).

Mechanisms for Metastability in Hydrogenated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
R. Biswas ◽  
Y.-P. Li ◽  
B.C. Pan
Keyword(s):  
Amorphous Silicon ◽  
Structural Changes ◽  
Defect Formation ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bond ◽  
Dangling Bonds ◽  
New Model ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Metastable Defect

ABSTRACTWe propose metastabilities in amorphous silicon fall into two classes. One class is the local changes of structure affecting a macroscopic fraction of sites. The other class is the metastable generation of dangling bonds with mid-gap states. The local metastability is explained by a new metastable state formed when H is flipped to the backside of the Si-H bond at monohydride sites. The dipole moment of this H-flip defect is larger and increases the infrared absorption. This H-flip defect accounts for large structural changes observed on light soaking including larger absorption and volume dilation. We propose a new model for the generation of metastable dangling bonds. The new ‘silicon network rebonding model’ involves breaking of weak silicon bonds and formation of isolated dangling bonds, through rebonding of the silicon network. Hydrogen motion is not involved in metastable defect formation. Defect formation proceeds by breaking weak silicon bonds and formation of dangling bond-floating bond pairs. The floating bonds migrate through the network and annihilate, producing isolated dangling bonds. This new model provides a new platform for understanding the atomistic origins of lightinduced degradation.

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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