Handbook on Secondary Particle Production and Transport by High-Energy Heavy Ions

10.1142/5973 ◽  
2005 ◽  
Author(s):  
Takashi Nakamura ◽  
Lawrence Heilbronn
Keyword(s):  
Heavy Ions ◽  
Particle Production ◽  
Secondary Particle ◽  
High Energy

Secondary Particle Production in High-Energy Muon-Nucleon Interactions

1970 ◽  
Vol 24 (10) ◽  
pp. 526-529 ◽  
Author(s):  
P. L. Jain ◽  
R. D. Malucci ◽  
M. J. Potoczak
Keyword(s):  
Particle Production ◽  
Secondary Particle ◽  
High Energy ◽  
High Energy Muon ◽  
Nucleon Interactions

scholarly journals Super heavy particle production in high energy heavy ion collision

2021 ◽  
Author(s):  
Kurepin Alexey
Keyword(s):  
Heavy Ions ◽  
Particle Production ◽  
Heavy Particle ◽  
Parton Model ◽  
Heavy Ion ◽  
High Energy ◽  
Heavy Ion Collision ◽  
The One ◽  
Ion Collision

Abstract The estimate based on the parton model is made on the rate of production of Super Heavy Particle ( SHP ) in subthreshold collision of heavy ions at LHC. For the one-month run of lead-lead collision the yield of 16 TeV particle is of the order of 70 per year.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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