Guide to Characteristics and Characterization of Semiconductor Surfaces

10.1142/12792 ◽  
2022 ◽  
Author(s):  
Jerzy Ruzyllo
Keyword(s):  
Semiconductor Surfaces

Contactless electromodulation for the characterization of semiconductor surfaces/interfaces

1994 ◽  
pp. 307-314
Author(s):  
Fred H. Pollak ◽  
H. Qiang ◽  
D. Yan ◽  
Yichun Yin ◽  
J.M. Woodall
Keyword(s):  
Semiconductor Surfaces

Molecular Self-Assembly at Bare Semiconductor Surfaces: Characterization of a Homologous Series of n-Alkanethiolate Monolayers on GaAs(001)

ACS Nano ◽  
2007 ◽  
Vol 1 (1) ◽  
pp. 30-49 ◽  
Author(s):  
Christine L. McGuiness ◽  
Daniel Blasini ◽  
John P. Masejewski ◽  
Sundararajan Uppili ◽  
Orlando M. Cabarcos ◽  
...  
Keyword(s):  
Self Assembly ◽  
Homologous Series ◽  
Semiconductor Surfaces

Contactless Electromodulation Characterization of Compound Semiconductor Surfaces and Device Structures

1993 ◽  
Vol 324 ◽  
Author(s):  
J.M. Woodall
Keyword(s):  
Fermi Level ◽  
Electric Fields ◽  
Growth Conditions ◽  
Compound Semiconductor ◽  
Conduction Band Edge ◽  
Semiconductor Surfaces ◽  
Air Exposure ◽  
Fermi Level Pinning ◽  
Characterization Of Properties

AbstractThis paper will review the use of contactless electromodulation methods, such as photoreflectance (PR) and contactless electroreflectance (CER), to characterize the electronic properties of compound semiconductor surfaces exposed to different growth and post-growth conditions. Also the characterization of properties critical to device performance can be evaluated. For example, using PR and CER it has been found that there is a lower density of surface hole traps than electron traps in certain as-grown MBE (001) GaAs samples and that this condition persists even after air exposure. This behaviour is in contrast to other samples, including both bulk and MBE grown (001) surfaces in which the Fermi level is pinned mid-gap for both n- and p-type structures. We also have observed that Ar+ bombardment under UHV conditions results in Fermi level pinning close to the conduction band edge and that thermal annealing restores mid-gap pinning. Finally, using PR we are able to characterize the electric fields and associated doping levels in the emitter and collector regions of heterojunction bipolar transistor structures (fabricated from III-V materials), thus demonstrating the ability to perform inprocess evaluation of important device parameters.

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