Applied Analog Electronics

Abstract The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

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All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

Journal of Nanotechnology ◽

10.1155/2011/823680 ◽

2011 ◽

Vol 2011 ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Guiru Gu ◽

Yunfeng Ling ◽

Runyu Liu ◽

Puminun Vasinajindakaw ◽

Xuejun Lu ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotubes ◽

Field Effect Transistors ◽

Thin Film Transistor ◽

Oxide Semiconductor ◽

Single Walled Carbon Nanotube ◽

Single Walled Carbon ◽

Analog Electronics ◽

The One ◽

Walled Carbon Nanotubes

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

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