New aspects on the reactivity of MoO2(S2CNEt2)2 with Me3SiX. A peculiar trans effect control

1999 ◽  
Vol 77 (9) ◽  
pp. 1521-1527 ◽  
Author(s):  
H Teruel ◽  
A Sierraalta

The reaction of MoO2(S2CNEt2)2 with Me3SiI and Me3SiNCS yielded MoOI2(S2CNEt2)2 and MoO(NCS)2(S2CNEt2)2, respectively, similar to results reported for Me3SiCl and Me3SiBr. On the contrary, MoO(OSiMe3)CN(S2CNEt2)2 was the only compound isolated from the reaction of MoO2(S2CNEt2)2 with Me3SiCN. To study the effects of ligands on the reactivity of siloxy compounds, ab initio calculations were undertaken for Mo(OSiH3)L(S2CNH2)2 molecules, for L = Cl, Br, I, NCS, and CN. The electronic density, ρ(r), was analysed by means of the topological theory of Atoms in Molecules (AIM). The analysis of -del2ρ(r) critical points (CPs) at the molybdenum valence shell showed, only in the case of L = CN, a local charge concentration region (N-type CPs) susceptible to electrophilic attacks. However, for L = Cl, Br, I, and NCS, local charge depletion sites (E-type CPs) were found in a bond-free region. The absence of any accessible E-type CPs and the presence of an N-type CP in the same region, opposite to the Mo=O group, justified the stability of Mo(OSiMe3)L(S2CNEt2)2 for L = CN, and the formation of MoOL2(S2CNEt2)2 for L = Cl, Br, I, and NCS by further reaction with the corresponding Me3SiL.Key words: ab initio calculation, electronic density, Mo-siloxy compound, reactivity, theoretical.

1996 ◽  
Vol 74 (6) ◽  
pp. 1014-1020 ◽  
Author(s):  
Yosslen Aray ◽  
Jesús Rodríguez

Molecular orbital ab initio Hartree–Fock, post-Hartree–Fock at the MP2 and QCISD levels, and density functional theory calculations of the dipole moment, the topology of the electronic density, ρ(r), and its Laplacian, [Formula: see text], for CO and NO molecules are reported. The results obtained confirm that density functional methods provide remarkably good electronic properties and a good description of the topology of ρ(r) and [Formula: see text]. The Becke exchange functional with the correlation functional of Lee, Yang, and Parr was used to calculate the electronic density of the (100) Cu surface. Topological analysis of ρ(r) shows that the crystal graph corresponds to square pyramids between the atoms of the top of the surface and the atoms of the second layer The topological analysis of [Formula: see text] shows that the atomic graph of the Cu surface exhibits one (3,−3) local charge concentration surrounded by four (3,+1) local charge depletion points. Additionally, there is a (3,+3) local depletion in the midpoint between each of four contiguous Cu atoms corresponding to the active site for the adsorption of the (3,−3) local charge concentration on the C atom of the CO or the N atom of the NO molecule. The larger value of the [Formula: see text] at the nonbonded charge concentration on the atoms and the geometrical configuration of these critical points favor the interaction of the NO over the CO molecule with the (100) Cu surface. This result is in accord with the known reaction barriers for these molecules. Key words: density functional theory, Laplacian of the electronic density, (100) Cu surface, carbon monoxide, nitrogen monoxide, molecular graph, atomic graph.


1979 ◽  
Vol 101 (8) ◽  
pp. 2002-2010 ◽  
Author(s):  
Ann Schmiedekamp ◽  
D. W. J. Cruickshank ◽  
Steen Skaarup ◽  
Peter Pulay ◽  
Istvan Hargittai ◽  
...  

2011 ◽  
Vol 170 ◽  
pp. 298-301 ◽  
Author(s):  
Konstantin Klyukin ◽  
Marina G. Shelyapina ◽  
Daniel Fruchart

Mg/TM thin films are objects of interest as hydrogen storage materials due to their expected interesting thermodynamic and hydrogen sorption kinetic properties. Here we report on the results of ab initio calculation on the stability of Mgn/Ti and Mgn/Nbm thin films.


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