Cathodic luminescence of oxide covered aluminium and tantalum electrodes

1977 ◽  
Vol 55 (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Jouko J. Kankare ◽  
Douglas E. Ryan ◽  
Bernhard J. Fürst

Cathodic luminescence of oxide covered aluminium and tantalum electrodes in various electrolyte solutions was measured at low amplitude (0 to 10 V) ac excitation. Oxygen or hydrogen peroxide are necessary constituents of the solution for high levels of light emission. For the aluminium electrode in tartrate solutions, copper enhanced light emission at concentrations down to 10 ppb.The tantalum electrode gave fairly high luminescence in solutions containing sodium perchlorate, perchloric acid, and hydrogen peroxide, but copper had no influence on the luminescence output. A mechanism based on the electrogeneration of singlet oxygen and its subsequent radiative transition to the triplet state is suggested.

Quantitative Raman spectroscopy of electrolyte solutions can furnish direct evidence of the species present in concentrated solutions and their concentrations, but it is by no means easy to develop the photoelectric recording of the Raman intensities to yield measurements of sufficient accuracy. This has been achieved by Young at Chicago between 1948 and 1959; work which has been largely unpublished. The present paper describes the development and subsequent testing of apparatus in Newcastle for the photoelectric recording of Raman spectra to the high precision and reproducibility necessary. The principal requirements are a highly stable mercury arc light source and stable electronic amplification of the d.c. signal from the photomultiplier tube. Perchloric acid was chosen as the first system for quantitative study in view of doubts about the low value for the dissociation constant of 38 moles 1. -1 obtained by Redlich by n.m .r. spectroscopy, despite the apparent agreement with his earlier values of the degree of dissociation from photographic Raman studies. N.m .r. studies yield similar dissociation constants for nitric acid and perchloric acids. This is not in keeping with ideas about the strengths of these acids, and in particular conductivity measurements (Murray-Rust & Hartley 1929) show that perchloric acid is highly ionized in methanol whereas nitric acid is not. From studies of the intensity of the 931 cm -1 perchlorate ion line in perchloric acid solutions up to 11 M, values for the degree of dissociation (α) in the equilibrium H 2 O + HClO 4 ⇔ H 3 O + + ClO - 4 (1 - α)c αc αc were obtained by assuming that α is unity in the most dilute solution studied (0·3 M). This method obviates the use of a standard salt such as sodium perchlorate for comparison of the measured Raman intensities. The distinction is important in view of recent measurements which show that the integrated intensity of the nitrate ion band in aqueous solutions of metal nitrates is not strictly proportional to nitrate ion concentration (Vollmar 1963). The values of α obtained do not deviate significantly from unity until the molarity is greater than about 10 M, in which solutions there is insufficient water present to solvate the proton as H 9 O + 4 as in dilute solutions. The values obtained differ markedly from those from the n.m .r. studies, but it is suggested that the latter are incorrect being based on the naive assumption that the proton chemical shift does not vary as its solvation changes in solutions of increasing acid concentration.


2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.


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