Heats of mixing in the system acetone – acetic anhydride – carbon disulfide, and the corresponding binary systems, at room temperature

1970 ◽  
Vol 48 (10) ◽  
pp. 1579-1584 ◽  
Author(s):  
A. N. Campbell ◽  
E. M. Kartzmark ◽  
S. C. Anand

A simple calorimeter has been devised by means of which the heats of mixing (molar excess heats) of the following systems have been determined at 22 °C: acetone – acetic anhydride; acetone – carbon disulfide; acetic anhydride – carbon disulfide; and a pseudo-binary section of the ternary system acetone – acetic anhydride – carbon disulfide. From these data the partial molar excess heats have been obtained. All systems are very non-ideal except the system acetone – acetic anhydride, which is almost ideal.For the partially miscible system acetic anhydride – carbon disulfide, the excess thermodynamic quantities of mixing, GE, HE, and TSE, have been calculated,

1969 ◽  
Vol 47 (4) ◽  
pp. 619-623 ◽  
Author(s):  
A. N. Campbell ◽  
E. M. Kartzmark

The physical properties mentioned in the title have been determined for the six systems: (a) aniline–hexane, (b) methanol–cyclohexane, (c) methanol–carbon disulfide, (d) acetic anhydride–carbon disulfide, (e) acetic anhydride–cyclohexane, and (f) triethylamine–water, over the complete range of composition. All six systems are partially miscible, above or below a critical solution temperature (c.s.t.).From the experimental data, the partial molal heats of mixing have been calculated, using the Redlich and Kister equations. The enthalpy of hydrogen bonding in the triethylamine–water compound appears to be about −1.33 kcal per hydrogen bond.The orientation polarization, according to the Syrkin formula, appears always to exhibit negative deviation from ideality, at least over part of the concentration range.


1970 ◽  
Vol 48 (6) ◽  
pp. 904-909 ◽  
Author(s):  
A. N. Campbell ◽  
E. M. Kartzmark

The following physical properties of the acetic anhydride – acetone – carbon disulfide system have been investigated: congruent compositions, excess volumes, dielectric constants. For the system acetone – carbon disulfide, the excess volumes and the molar polarizations are much greater than those required by the mixture rule. From this we deduced that this system is very non-ideal and might, at a suitable temperature, form two layers; two liquid layers did indeed form at −73 °C, the upper critical solution temperature occurring somewhere between this temperature and 0 °C. We offer it as a general rule that, if the deviation from additivity of molar polarization is large and positive, two layers will form at a sufficiently low temperature, provided that solid phases do not intervene. This deduction becomes almost a certainty if large positive deviations from additivity of molar volume and large positive heats of mixing are also present.


1968 ◽  
Vol 23 (11) ◽  
pp. 1805-1815 ◽  
Author(s):  
F. Becker ◽  
H. D. Pflug ◽  
M. Kiefer

The relationship between heats of mixing and chemical interactions has been investigated and is now discussed for three liquid binary systems, i. e. diethyl ether-chloroform, nitromethane-sulfuric acid, and isopropanol-isopropylamine. On the basis of a suitable equilibrium model, involving the formation of only one species of intermolecular compounds, equations HM= ƒ (N0Δ) (HM=heat of mixing, N0Δ =mole fraction of component A) are derived. The equations are convenient for representing the experimental data of symmetrical mixing curves, and they also allow us to calculate the thermodynamic quantities of the pertaining equilibrium reactions. Plotting HM versus N0Δ/ (—HM) should give a straight line over the whole concentration range, thus warranting a reliable criterion for the applicability of the equilibrium model. The heats of mixing were measured at 25° and 20°, respectively, using a new type of continuous dilution calorimeter, which supplied a sufficient number of accurate experimental data.


1985 ◽  
Vol 22 (3) ◽  
pp. 277-287 ◽  
Author(s):  
Gérard Douhéret ◽  
Colette Moreau ◽  
André Viallard

1978 ◽  
Vol 43 (3) ◽  
pp. 829-836 ◽  
Author(s):  
Ján Biroš ◽  
Antonín Živný ◽  
Julius Pouchlý

2003 ◽  
Vol 10 (01) ◽  
pp. 55-63 ◽  
Author(s):  
M. DIANI ◽  
J. DIOURI ◽  
L. KUBLER ◽  
L. SIMON ◽  
D. AUBEL ◽  
...  

In 6H- or 4H-SiC(0001) surface technology, a Si-rich 3 × 3 reconstruction is usually first prepared by heating at 800°C under Si flux, and two other most stable [Formula: see text] or [Formula: see text] reconstructions are obtained by further extensive annealing at higher temperatures ranging between 900 and 1250°C. The 3 × 3 Si excess is thus progressively depleted up to a graphitized C-rich surface. By crystallographic (LEED) and chemical surface characterizations (XPS and UPS), we show that all these reconstructions can be obtained at a unique, low formation temperature of 800°C if the Si richness is controlled before annealing. This control is achieved by exposing the 3 × 3 surface to atomic hydrogen at room temperature. This procedure allows one to etch or partially deplete the (3 × 3)-associated Si excess, and make it more comparable to the final Si coverages, required to form the less Si-rich [Formula: see text] or [Formula: see text] reconstructions. After annealing at 800°C, the latter reconstructions are no longer determined by the heating time or temperature but only by the initial Si coverage set by the H doses inducing the low temperature etching. The high temperature treatment, required to remove by sublimation a significant Si amount associated with the Si-rich 3 × 3 reconstruction, is thus avoided. Such a methodology could be applied to other binary systems in the formation of reconstructions that depends on surface richness.


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