scholarly journals Free radicals by mass spectrometry. XXXIX. Primary steps in the mercury-photosensitized decompositions of methyl and ethyl mercaptan

1968 ◽  
Vol 46 (18) ◽  
pp. 2925-2927 ◽  
Author(s):  
S. Yamashita ◽  
F. P. Lossing
Keyword(s):  
Mass Spectrometry ◽  
Free Radicals ◽  
Bond Rupture ◽  
Methyl Mercaptan ◽  
Ethyl Mercaptan ◽  
A Minor

The reaction between Hg(3P1) atoms and methyl mercaptan at 55° is mainly H-atom removal from sulfur[Formula: see text]with a minor participation (~10%) of C—S bond rupture[Formula: see text]Ethyl mercaptan dissociates by two main processes[Formula: see text]Some evidence was found for a small amount of dissociation by C—C bond rupture. No C—H bond rupture in either compound could be detected.

FREE RADICALS BY MASS SPECTROMETRY: XXXII. THERMAL DECOMPOSITION OF CYCLOPENTYL RADICALS

1965 ◽  
Vol 43 (3) ◽  
pp. 565-569 ◽  
Author(s):  
T. F. Palmer ◽  
F. P. Lossing
Keyword(s):  
Mass Spectrometry ◽  
Thermal Decomposition ◽  
Free Radicals ◽  
Elevated Temperatures ◽  
Bond Rupture ◽  
Low Pressures

At low pressures and elevated temperatures cyclopentyl radicals are found to dissociate mainly by two modes of reaction: about 34% by loss of H atom to form cyclopentene, and about 66% by a C—C bond rupture to form ethylene and allyl radicals. Under the conditions employed no evidence for a third possible mode, the loss of H2 to form cyclopentenyl radical, could be found. It is estimated that an incidence of 2% of the latter could have been detected.

Heats of formation of free radicals by mass spectrometry

1973 ◽  
Vol 95 (20) ◽  
pp. 6562-6566 ◽  
Author(s):  
D. K. Sen. Sharma ◽  
J. L. Franklin
Keyword(s):  
Mass Spectrometry ◽  
Free Radicals ◽  
Heats Of Formation

Chemistry of SiO2 Plasma Deposition

1990 ◽  
Vol 204 ◽  
Author(s):  
Donald L. Smith ◽  
Andrew S. Alimonda ◽  
Tzu-Chin Chuang
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Plasma Deposition ◽  
Electron Trapping ◽  
Electrical Characteristics ◽  
Rf Power ◽  
Film Analysis ◽  
Minor Contribution ◽  
Thermal Oxide ◽  
A Minor

ABSTRACTThe chemistry of SiO2 deposition from N20-SiH4 plasma was studied by line-ofsight mass spectrometry coupled with film analysis. If rf power and N2O flow are sufficient, more than enough O atoms are available to convert all of the SiH4 to SiO2, and good electrical characteristics (IV and breakdown) are then obtained with or without He dilution. Gas-phase SimHn(OH)p species make a minor contribution to the deposition and may be the source of the OH in the film. Both [OH] and electron trapping are much larger than for thermal oxide, with or without He dilution.

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