PYRAZOLINES: PART III. THE PREPARATION AND PYROLYSIS OF 4,5-DIMETHYL-3-CARBOMETHOXY-Δ2-PYRAZOLINE AND 3,5-DIMETHYL-3-CARBOMETHOXY-Δ1-PYRAZOLINE

1963 ◽  
Vol 41 (3) ◽  
pp. 726-731 ◽  
Author(s):  
Donald E. McGreer ◽  
Peter Morris ◽  
George Carmichael
Keyword(s):  
Vapor Phase ◽  
Substituent Effects ◽  
Product Analysis

4,5-Dimethyl-3-carbomethoxy-Δ2-pyrazoline and 3,5-dimethyl-3-carbomethoxy-Δ1-pyrazoline have been synthesized and pyrolized neat and in the vapor phase. The product analysis from these and a related dimethyl-3-carbomethoxypyrazoline indicate that substituent effects of methyls in the ring are cumulative.

Vapor-phase butane nitration product analysis by on-line multiple column gas chromatography

1968 ◽  
Vol 35 ◽  
pp. 10-16
Author(s):  
R.W. Handinson ◽  
D.H. Johnnie ◽  
B.F. Fives ◽  
George Burnet
Keyword(s):  
Gas Chromatography ◽  
Vapor Phase ◽  
Product Analysis ◽  
Nitration Product ◽  
On Line

PYRAZOLINES: PART II

1960 ◽  
Vol 38 (12) ◽  
pp. 2410-2417 ◽  
Author(s):  
Donald E. McGreer ◽  
Wing Wai ◽  
George Carmichael
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Phase Reaction ◽  
Hydrogen Phosphate ◽  
Product Analysis ◽  
Pyrolysis Reaction ◽  
Potassium Hydrogen ◽  
Liquid Phase Reaction

Product analysis has been carried out on the pyrolysis reaction in the liquid and vapor phase of 4- and 5-methyl-3-carbomethoxy-Δ2-pyrazolines and 3-methyl-3-carbomethoxy-Δ1-pyrazoline. The proportion of cyclopropane product was found to be greater than earlier reports had indicated and was higher for the vapor-phase pyrolysis than for the liquid-phase reaction. Vapor-phase pyrolysis of Δ2-pyrazolines was found to require a catalyst, such as potassium hydrogen phosphate, which is believed to make possible the transformation of the Δ2-pyrazoline into the pyrolyzable Δ1-pyrazoline.

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Substituent effects and solvents

1992 ◽  
Vol 89 ◽  
pp. 1567-1571
Author(s):  
O Pytela ◽  
M Ludwig
Keyword(s):  
Substituent Effects

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide
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