THE ACTION OF SODIUM IODIDE ON O-p-TOLUENE-SULPHONYL-1,4;3,6-DIANHYDRIDES OF D-MANNITOL, D-GLUCITOL, AND L-IDITOL

1959 ◽  
Vol 37 (6) ◽  
pp. 1048-1052 ◽  
Author(s):  
M. Jackson ◽  
L. D. Hayward
Keyword(s):  
Acetic Anhydride ◽  
Sodium Iodide ◽  
Crystalline Material ◽  
Displacement Reaction

In the displacement reaction with sodium iodide in acetic anhydride solution the rates of reaction of four isohexide tosyl esters were compared to that of an O-acetyl-O-tosylisosorbide recently described. The tosyloxy group in the latter compound was replaced rapidly and was therefore in the 5-endo-position, the compound being correctly named 2-O-acetyl-5-O-p-toluenesulphonyl-1,4;3,6-dianhydro-D-glucitol. The product of the reaction was isolated as a crystalline material, and was identified as 2-O-acetyl-5-deoxy-5-iodo-1,4;3,6-dianhydro-L-iditol.

Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD

1993 ◽  
Vol 51 ◽  
pp. 918-919
Author(s):  
K.L. More ◽  
R.A. Lowden ◽  
T.M. Besmann
Keyword(s):  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Chemical Vapor ◽  
Processing Method ◽  
Crystalline Material ◽  
Structural Ceramic ◽  
Alternative Processing ◽  
Strong Candidate ◽  
Hot Pressing Sintering ◽  
Processing Techniques

Silicon nitride possesses an attractive combination of thermo-mechanical properties which makes it a strong candidate material for many structural ceramic applications. Unfortunately, many of the conventional processing techniques used to produce Si3N4, such as hot-pressing, sintering, and hot-isostatic pressing, utilize significant amounts of densification aids (Y2O3, Al2O3, MgO, etc.) which ultimately lowers the utilization temperature to well below that of pure Si3N4 and also decreases the oxidation resistance. Chemical vapor deposition (CVD) is an alternative processing method for producing pure Si3N4. However, deposits made at temperatures less than ~1200°C are usually amorphous and at slightly higher temperatures, the deposition of crystalline material requires extremely low deposition rates (~5 μm/h). Niihara and Hirai deposited crystalline α-Si3N4 at 1400°C at a deposition rate of ~730 μm/h. Hirai and Hayashi successfully lowered the CVD temperature for the growth of crystalline Si3N4 by adding TiCl4 vapor to the SiCl4, NH3, and H2 reactants. This resulted in the growth of α-Si3N4 with small amounts of TiN at temperatures as low as 1250°C.

DETERMINATION OF ALDOSTERONE AND DEOXYCORTICOSTERONE IN PLASMA USING 3H-ACETIC ANHYDRIDE AND VAPOUR PHASE ACETYLATION

1969 ◽  
Vol 61 (1_Suppl) ◽  
pp. S12 ◽  
Author(s):  
V. H. T. James ◽  
A. E. Rippon ◽  
M. L. Arnold
Keyword(s):  
Acetic Anhydride ◽  
Vapour Phase

Identification of novel sodium iodide symporter (NIS) interactors which modulate iodide uptake

2016 ◽  
Author(s):  
Alice Fletcher ◽  
Vikki Poole ◽  
Bhavika Modasia ◽  
Waraporn Imruetaicharoenchoke ◽  
Rebecca Thompson ◽  
...  
Keyword(s):  
Sodium Iodide ◽  
Sodium Iodide Symporter ◽  
Iodide Uptake

Identification of novel sodium iodide symporter interactors which modulate iodide uptake

2017 ◽  
Author(s):  
Alice Fletcher ◽  
Vikki Poole ◽  
Bhavika Modasia ◽  
Waraporn Imruetaicharoenchoke ◽  
Rebecca Thompson ◽  
...  
Keyword(s):  
Sodium Iodide ◽  
Sodium Iodide Symporter ◽  
Iodide Uptake

An investigation into sodium-iodide symporter (NIS) dimerization and its impact on radioiodide uptake in thyroid cancer

2017 ◽  
Author(s):  
Rebecca J. Thompson ◽  
Alice Fletcher ◽  
Hannah Nieto ◽  
Mohammed Alshahrani ◽  
Katie Baker ◽  
...  
Keyword(s):  
Thyroid Cancer ◽  
Sodium Iodide ◽  
Sodium Iodide Symporter

Identification of novel sodium iodide symporter (NIS) interactors which modulate radioiodine uptake

2018 ◽  
Author(s):  
Alice Fletcher ◽  
Vikki Poole ◽  
Caitlin Thornton ◽  
Kate Baker ◽  
Rebecca Thompson ◽  
...  
Keyword(s):  
Sodium Iodide ◽  
Sodium Iodide Symporter ◽  
Radioiodine Uptake

Comparison of Lead, Copper and Aluminium as Gamma Radiation Shielding Material through Experimental Measurements and Simulation Using MCNP Version 4c

2018 ◽  
Vol 9 (08) ◽  
pp. 20193-20206 ◽  
Author(s):  
Md. Akhlak Bin Aziz ◽  
Md. Faisal Rahman ◽  
Md. Mahidul Haque Prodhan
Keyword(s):  
Gamma Radiation ◽  
Sodium Iodide ◽  
Experimental Approach ◽  
Radiation Shielding ◽  
Test Material ◽  
Simulation Techniques ◽  
Radiation Sources ◽  
Simulation Monte Carlo ◽  
Shielding Material ◽  
Code Version

The paper compares  Lead, Copper and Aluminium as gamma radiation shielding material using both experimental and simulation techniques. Cs- 137 (662KeV), Na-22 (511KeV) and Na- 22(1274KeV) were used as gamma radiation sources and a sodium iodide (NaI) detector was used to detect the radiation. Variations were noted for detected gamma count rates by changing shielding material thickness. In the experimental approach, thickness was varied by placing sheets of a particular test material one by one. For simulation, Monte Carlo n- Particle (MCNP) code version 4c was used and the geometry of the whole experimental setup was plotted in it. The results were then compared for each test material and it was found that lead is the best shielding material for gamma radiation followed by copper and aluminium.

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