MOLTEN SALTS: VISCOSITY OF SILVER NITRATE

1954 ◽  
Vol 32 (9) ◽  
pp. 839-841 ◽  
Author(s):  
F. A. Pugsley ◽  
F. E. W. Wetmore
Keyword(s):  
Silver Nitrate ◽  
Temperature Dependence ◽  
Viscous Flow ◽  
Electrical Transport ◽  
Molten Salts ◽  
Energy Of Activation

Precise values for the viscosity of silver nitrate show that Frenkel's relation for comparison of the temperature dependence of viscosity and conductivity is valid for this system and that the energy of activation for viscous flow is proportional to that for electrical transport over a range of temperature.

MOLTEN SALTS ELECTRICAL CONDUCTIVITY IN THE SYSTEM SILVER NITRATE–SODIUM NITRATE

1952 ◽  
Vol 30 (12) ◽  
pp. 922-923 ◽  
Author(s):  
June Byrne ◽  
Helen Fleming ◽  
F. E. W. Wetmore
Keyword(s):  
Electrical Conductivity ◽  
Melting Point ◽  
Silver Nitrate ◽  
Mole Fraction ◽  
Sodium Nitrate ◽  
Molten Salts ◽  
Energy Of Activation ◽  
Equivalent Conductivity ◽  
Density Data ◽  
Arrhenius Energy

Conductivity and density data have been obtained for the system silver nitrate – sodium nitrate. The Arrhenius energy of activation for electrical migration in sodium nitrate and in the binary melts decreases with rising temperature above the melting point, as was shown previously for silver nitrate. The equivalent conductivity isotherms for the binary melts are almost linear in the mole fraction.

MOLTEN SALTS. ELECTRICAL TRANSPORT IN THE SYSTEM SILVER NITRATE–SODIUM NITRATE

1952 ◽  
Vol 30 (10) ◽  
pp. 779-782 ◽  
Author(s):  
P. M. Aziz ◽  
F. E. W. Wetmore
Keyword(s):  
Silver Nitrate ◽  
Sodium Nitrate ◽  
Electrical Transport ◽  
Molten Salts ◽  
Silver Ion ◽  
Sodium Ion ◽  
Nitrate Ion ◽  
Usual Assumption ◽  
The Individual

Relative transport fractions have been measured in the molten system silver nitrate - sodium nitrate at 330° over the range 5 to 25 mole% silver nitrate. The individual fractions for silver, sodium, and nitrate ion have been assessed within limits. The results indicate that transport by silver ion is greater than that by sodium ion at the same concentration, although the latter has the smaller radius. The usual assumption that the largest ion (nitrate) does not transport charge is within the interpretation of the results.

Temperature dependence of electrical transport properties of La4BaCu5−xCoxO13+δconducting oxide thin films

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxide Thin Films ◽  
Electrical Transport Properties

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

Temperature dependence of MeV heavy ion irradiation-induced viscous flow in SiO2

1997 ◽  
Vol 71 (12) ◽  
pp. 1628-1630 ◽  
Author(s):  
M. L. Brongersma ◽  
E. Snoeks ◽  
A. Polman
Keyword(s):  
Temperature Dependence ◽  
Viscous Flow ◽  
Ion Irradiation ◽  
Heavy Ion ◽  
Heavy Ion Irradiation
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