Ti5Si1.3Sb1.7 — The first titanium silicide antimonide, forming a crystal structure not found in either binary system

2001 ◽  
Vol 79 (9) ◽  
pp. 1338-1343
Author(s):  
Holger Kleinke
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Binary System ◽  
Ternary Phase ◽  
Linear Chain ◽  
Titanium Silicide ◽  
Main Group Elements ◽  
Band Structure Calculations ◽  
Structure And Bonding ◽  
Structure Calculations

Ti5SixSb3–x can be prepared by melting mixtures of Ti, Si, and TiSb2. The ternary phase with x = 1.32(5) crystallizes in the W5Si3 type (space group I4/mcm, Z = 8, for x = 1.32(5): a = 1034.6(2), c = 515.2(1) pm), while Ti5Sb3 and Ti5Si3 adopt the Yb5Sb3 type and the Mn5Si3 type, respectively. The Si and Sb atoms share two sites in Ti5Si1.32(5)Sb1.68: one site is located within a linear chain with short interatomic bonds, which is almost exclusively occupied by Si (i.e., 92(1)% Si and 8% Sb), whereas the second site, being occupied by 80(2)% Sb and 20% Si, shows no significant interactions between the main group elements. Band structure calculations reveal the new silicide antimonide being metallic as a consequence of partly filled Ti d states. The structure is mainly stabilized by bonding Ti—Sb, Ti—Si, and Si—Si interactions.Key words: titanium, silicide, antimonide, crystal structure, electronic structure, structure and bonding.

Kristall- und elektronische Struktur von LaAlSi2 / Crystal and Electronic Structure of LaAlSi2

2001 ◽  
Vol 56 (7) ◽  
pp. 620-625 ◽  
Author(s):  
Christian Kranenberg ◽  
Dirk Johrendt ◽  
Albrecht Mewis ◽  
Winfried Kockelmann
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Neutron Diffraction ◽  
Structure Type ◽  
X Ray ◽  
Arc Melting ◽  
Band Structure Calculations ◽  
Ray Methods ◽  
Structure Calculations ◽  
Crystal And Electronic Structure

Abstract LaAlSi2 (a = 4.196(2), c = 11.437(7) Å; P3̄ml; Z = 2) was synthesized by arc-melting of preheated mixtures of the elements. The compound was investigated by means of X-ray methods and by neutron diffraction. The crystal structure can be described as a stacking variant of two different segments. The first one corresponds to the CaAl2Si2 structure type (LaAl2Si2), the second one with the A1B2 structure type (LaSi2). The segments are stacked along [001]. The electronic structure of the compound is discussed on the basis of LMTO band structure calculations.

Band Structure and Electronic Properties of Lithium Phosphide Li3P

1990 ◽  
Vol 210 ◽  
Author(s):  
Max Seel ◽  
Ravi Pandey
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Band Structure ◽  
Energy Band Structure ◽  
Lithium Nitride ◽  
Charge Densities ◽  
Hartree Fock ◽  
Band Structure Calculations ◽  
Structure Density ◽  
Structure Calculations

AbstractAb initio Hartree-Fock band structure calculations have been performed to study the electronic structure of Li3P in the hexagonal P6/mmm crystal structure. The total energy, band structure, density of states, and charge densities are computed. The band structure is very similar to that calculated for lithium nitride with a small indirect gap between Γ and K of 2 eV. However, the charge distribution in Li 3P is more anisotropic with a greater ionicity in the x-y plane compared to the c direction. This is also supported by a large calculated core level split of 6.5 eV of the Li ls core bands.

Polymorphism and the influence of crystal structure on the luminescence of the opto-electronic material 4,4′-bis(9-carbazolyl)biphenyl

CrystEngComm ◽  
2014 ◽  
Vol 16 (33) ◽  
pp. 7621-7625 ◽  
Author(s):  
Cody J. Gleason ◽  
Jordan M. Cox ◽  
Ian M. Walton ◽  
Jason B. Benedict
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Electronic Material ◽  
Single Crystal ◽  
Charge Transport ◽  
Luminescent Properties ◽  
Electronic Structure Calculations ◽  
Electronic Charge ◽  
Single Crystal Structures ◽  
Structure Calculations

Single crystal structures, luminescent properties and electronic structure calculations of three polymorphs of the opto-electronic charge transport material 4,4′-bis(9-carbazolyl)biphenyl.

Crystal structure characterization and electronic structure of a rare-earth-containing Zintl phase in the Yb–Al–Sb family: Yb3AlSb3

2021 ◽  
Vol 77 (6) ◽  
Author(s):  
Rongqing Shang ◽  
An T. Nguyen ◽  
Allan He ◽  
Susan M. Kauzlarich
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Rare Earth ◽  
Electronic Structure Calculations ◽  
Structure Characterization ◽  
Charge Balance ◽  
X Ray Diffraction ◽  
Zintl Phase ◽  
X Ray ◽  
Structure Calculations

A rare-earth-containing compound, ytterbium aluminium antimonide, Yb3AlSb3 (Ca3AlAs3-type structure), has been successfully synthesized within the Yb–Al–Sb system through flux methods. According to the Zintl formalism, this structure is nominally made up of (Yb2+)3[(Al1−)(1b – Sb2−)2(2b – Sb1−)], where 1b and 2b indicate 1-bonded and 2-bonded, respectively, and Al is treated as part of the covalent anionic network. The crystal structure features infinite corner-sharing AlSb4 tetrahedra, [AlSb2Sb2/2]6−, with Yb2+ cations residing between the tetrahedra to provide charge balance. Herein, the synthetic conditions, the crystal structure determined from single-crystal X-ray diffraction data, and electronic structure calculations are reported.

Specific Peculiarities of the Electronic Structure of SrPb3Br8 As Evidenced from First-Principles DFT Band-Structure Calculations

2019 ◽  
Vol 48 (5) ◽  
pp. 3059-3068 ◽  
Author(s):  
O. Y. Khyzhun ◽  
V. L. Bekenev ◽  
N. M. Denysyuk ◽  
L. I. Isaenko ◽  
A. P. Yelisseyev ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
First Principles ◽  
Band Structure Calculations ◽  
Structure Calculations

Electronic structure ofNaxCu1−xIn5S8compounds: X-ray photoemission spectroscopy study and band structure calculations

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
Catherine Guillot-Deudon ◽  
Sylvie Harel ◽  
Arezki Mokrani ◽  
Alain Lafond ◽  
Nicolas Barreau ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Band Structure Calculations ◽  
Structure Calculations

The electronic structure of disordered system

1964 ◽  
Vol 279 (1376) ◽  
pp. 82-97 ◽  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Density Of States ◽  
Disordered System ◽  
Perfect Lattice ◽  
Geometric Approximation ◽  
Band Structure Calculations ◽  
Interacting Electrons ◽  
Simplifying Assumptions ◽  
Structure Calculations

A general expression is written down for the density of states of non-interacting electrons in a disordered system. The expression is obtained on the basis of two simplifying assumptions; the geometric approximation, which is connected with the disorder, and an approximation concerning the potential which is commonly used in band structure calculations. In the case of a perfect lattice the result of Kohn & Rostoker (1954) for the band structure of the lattice is derived, and details of the density of states are available from the formula thus obtained. It is shown how the change in the energy of the electrons due to the presence of a phonon can be obtained.

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