Theoretical study on the influence of H2O for the 1,2-hydrogen shift from hydrogen peroxide (H2O2) to water oxide (O-OH2)

2001 ◽  
Vol 79 (1) ◽  
pp. 22-28 ◽  
Author(s):  
Toshiya Okajima

Theoretical calculation was performed to study the solvent effect for the 1,2-hydrogen shift from hydrogen peroxide (H2O2) (1) to water oxide (O-OH2) (2). Stationary points including transition structures (TSs) were optimized with no geometrical constraint at Becke3LYP/6-311++G** level. All stationary points were tested by frequency analysis and IRC calculation. The activation energies (ΔE[Formula: see text]) and heats of reaction (ΔH0) were evaluated at Becke3LYP/6-311++G**//Becke3LYP/6-311++G** level of theory. The following points were clarified: (i) inclusion of polarization function (*) and diffusion function (+) for calculation hardly affected the energetic of the reaction; (ii) judging from the change of ΔE[Formula: see text] and ΔH0 values, the reaction is predicted to be accelerated by the increase of involving H2O; (iii) proton-relaying mechanism considerably reduced ΔE[Formula: see text] values; (iv) the endothermicity became monotonically small as the number of solvating H2O molecules increased. The calculation suggests that the formation of water oxide (O-OH2) (2) from H2O2 (1) is promoted by a proton-relaying pathway in protic media (such as H2O).Key words: theoretical calculation, ab initio, transition structure, 1,2-hydrogen shift, water oxide.

2018 ◽  
Vol 20 (16) ◽  
pp. 10806-10814 ◽  
Author(s):  
M. Monge-Palacios ◽  
Matti P. Rissanen ◽  
Zhandong Wang ◽  
S. Mani Sarathy

We performed a theoretical study on the double hydrogen shift isomerization reaction of a six carbon atom Criegee intermediate (C6-CI), catalyzed by formic acid (HCOOH), to produce vinylhydroperoxide (VHP), C6-CI + HCOOH → VHP + HCOOH.


RSC Advances ◽  
2019 ◽  
Vol 9 (47) ◽  
pp. 27334-27340 ◽  
Author(s):  
Danna Zhang ◽  
Guochun Lv ◽  
Xiaomin Sun ◽  
Chenxi Zhang ◽  
Zhiqiang Li

We report the formation of an important organosulfur compound HMS and its oxidation using theoretical calculation.


2012 ◽  
Vol 1817 (8) ◽  
pp. 1314-1321 ◽  
Author(s):  
Maria M. (Mubarakshina) Borisova ◽  
Marina A. Kozuleva ◽  
Natalia N. Rudenko ◽  
Ilya A. Naydov ◽  
Irina B. Klenina ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Fathi Aqra ◽  
Ahmed Ayyad

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as and (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.


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