Optical identification of the exciton–polariton in epitaxial InAs
We report optical identification of the exciton–polariton in epitaxial InAs by combined photoluminescence, reflectance, and transmittance spectroscopy. The photoluminescence of these samples showed identifiable spectral lines a thousand times narrower than previously published results from other groups. The measurements were made at 1.4 K and at magnetic fields up to 7 T. Contrary to what is observed in other III–V semiconductors such as GaAs or InP, the free exciton (polariton) is nearly invisible in the photoluminescence spectrum without the application of a magnetic field. We believe that the relatively large residual donor concentration coupled with the large spatial extent of the exciton wave function in this material inhibit the existence of unbound excitonic recombination. Reflectance and transmittance spectroscopy provide very strong evidence that our identification is correct, and the magnetic field dependence yielded values of the electron effective mass and g-factor of (0.026 + 0.002)m0 and −15.3 ± 0.2, respectively, based on this assignment.