Piezoresistance characterization of commercial CMOS gate polysilicon and its application in biomass microsensors

1996 ◽  
Vol 74 (S1) ◽  
pp. 151-155
Author(s):  
J. M. Chen ◽  
M. Parameswaran ◽  
M. Paranjape
Keyword(s):  
Cmos Technology ◽  
Gauge Factor ◽  
Cmos Process ◽  
Mass Sensor ◽  
Strain Sensing ◽  
Sensing Element ◽  
Liquid Environment ◽  
Sensing Material ◽  
Low Levels

This paper presents experimental results on the piezoresistance characterization of gate polysilicon available from two commercial CMOS processes. It is shown that the gate polysilicon is very strain-sensitive, and a gauge factor of about 25 can be readily achieved. This value can allow standard gate polysilicon to be used as a strain-sensing element for integrated microsensor applications. As an example, a sub-nanogram mass sensor was fabricated using commercially available CMOS technology and is presented. The device incorporates gate polysilicon of the CMOS process as the sensing material, and is subjected to low levels of strain in order to measure small masses (< 10−9 g). A potential application for this sensor is to monitor the growth of biological cell cultures in a liquid environment.

A Low-Cost Low-Power Capacitive Humidity Sensor in CMOS Technology

2014 ◽  
Vol 556-562 ◽  
pp. 1842-1846
Author(s):  
Fang Ming Deng ◽  
Yi Gang He
Keyword(s):  
Humidity Sensor ◽  
Supply Voltage ◽  
Low Cost ◽  
Cmos Technology ◽  
Cmos Process ◽  
Sensing Element ◽  
Digital Conversion ◽  
Sensor Interface ◽  
Delta Sigma ◽  
Capacitive Humidity Sensor

This paper presents a capacitive humidity sensor in CMOS technology. The humidity sensor element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication cost. The sensor interface is based on a delta-sigma converter and can be easily reconfigured to compensate for process variation of the sensing element. The proposed humidity sensor is fabricated in 0.16μm standard CMOS process and the chip occupies 0.25mm2. The measurement result shows that this humidity sensor acquires a resolution of 0.1%RH in the range of 20%RH to 90%RH. The interface achieves a 12.5-bits capacitance-to-digital conversion and consumes only 9.6μW power at 1.2V supply voltage.

Enhanced Electromechanical Properties of Carbon Nanotube/Polyurethan Composite by KMnO4 Oxidation

2014 ◽  
Vol 605 ◽  
pp. 235-238
Author(s):  
Roman Bořuta ◽  
Petr Slobodian ◽  
Robert Olejnik ◽  
Michal Machovsky ◽  
Pavel Riha
Keyword(s):  
Electrical Resistance ◽  
Gauge Factor ◽  
Strain Sensing ◽  
Sensing Element ◽  
Electromechanical Properties ◽  
Deformation Strain ◽  
High Deformation ◽  
Polyurethane Composite ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

The effect of oxidation of multi-walled carbon nanotubes by KMnO4on the electrical resistance of a nanotube network/polyurethane composite subjected to bending has been studied. In this respect, the main achievement is a multiple increase of gauge factor for the evaluating electromechanical properties of the composite after nanotube oxidation with KMnO4. It indicates favorable properties of the composite for its use as a high-deformation strain-sensing element.

scholarly journals DEVELOPMENT AND CHARACTERIZATION OF STITCH-BASED SENSORS

2021 ◽  
Vol 2021 ◽  
pp. 18-25
Author(s):  
S.A. Odhiambo ◽  
S. Vasile ◽  
J. Sarrazyn ◽  
I. Rottiers ◽  
A. De Raeve
Keyword(s):  
Upper Body ◽  
Gauge Factor ◽  
Body Parts ◽  
Strain Sensing ◽  
Tensile Tester ◽  
Dynamic Forces ◽  
Thread Length ◽  
Sewing Threads ◽  
Polyamide 6.6

Strain sensing seams have been developed by integrating conductive sewing threads in different types of seam designs on a fabric typical for sports clothing using sewing technology. The aim was to obtain a simply integrated stitch-based sensor that can be applied on sports clothing to monitor the movements of the upper body parts of the user during exercising. Stitch types 304; 406; 602 and 605 were produced. The seams were made on a knitted fabric composed of 80% polyamide 6.6 and 20% elastane. The seams underwent stretch cycling for 10 cycles and up to 44 cycles following EN ISO 14704-1:2005 (modified), using an INSTRON tensile tester machine. The changes in the resistance of the seams with time were recorded simultaneously using Agilent meter U1273A. Sensing functionality among which is sensor gauge factor (GF), stability, drift, and reproducibility were evaluated on the promising sensor seams. The type of base fabric used, stitch type, stitch formation process (friction and dynamic forces during sewing), integrated EC thread length, and positioning of thread(s) in the fabric have a significant influence on the performance of the seams. Sensor seam 406-001comprising 2 EC yarns (Madeira HC12) and Sensor seam 304-010 comprising 1 EC yarn (Madeira HC40) turned out to be very promising and others shall be improved (sensor 602-006 with Madeira HC 40 and sensor 605-002 with a Muriel yarn).

scholarly journals Characterization of MWCNT-PEDOT: PSS Nanocomposite Flexible Thin Film for Piezoresistive Strain Sensing Application

2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Roopa Hegde ◽  
Koona Ramji ◽  
Swapna Peravali ◽  
Yallappa Shiralgi ◽  
Gurumurthy Hegde ◽  
...  
Keyword(s):  
Thin Film ◽  
Gauge Factor ◽  
Strain Sensing ◽  
High Concentration ◽  
Multiwalled Carbon ◽  
Polymer Substrates ◽  
Sensing Applications ◽  
Coating Method ◽  
Incremental Strain

Multiwalled carbon nanotubes (MWCNTs) were synthesized by the reduction of ethyl alcohol with sodium borohydride (NaBH4) under a strong basic solvent with the high concentration of sodium hydroxide (NaOH). Nanocomposites of different concentration of MWCNT dispersed in poly(3,4-ethylene dioxythiophene) polymerized with poly(4-styrene sulfonate) (PEDOT:PSS) were prepared and deposited on a flexible polyethylene terephthalate (PET) polymer substrates by the spin coating method. The thin films were characterized for their nanostructure and subsequently evaluated for their piezoresistive response. The films were subjected to an incremental strain from 0 to 6% at speed of 0.2 mm/min. The nanocomposite thin film with 0.1 wt% of MWCNT exhibits the highest gauge factor of 22.8 at 6% strain as well as the highest conductivity of 13.5 S/m. Hence, the fabricated thin film was found to be suitable for piezoresistive flexible strain sensing applications.

scholarly journals Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6037
Author(s):  
Diana Mata-Hernandez ◽  
Daniel Fernández ◽  
Saoni Banerji ◽  
Jordi Madrenas
Keyword(s):  
Comparative Analysis ◽  
Pressure Sensor ◽  
Structural Characteristics ◽  
Cmos Technology ◽  
Wet Etching ◽  
Cmos Process ◽  
Q Factor ◽  
Isotropic Etching ◽  
Cmos Mems

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

scholarly journals A Tracer Study on sCO2 Corrosion with Multiple Oxygen-Bearing Impurities

2021 ◽  
Author(s):  
Juho Lehmusto ◽  
Anton V. Ievlev ◽  
Ercan Cakmak ◽  
James R. Keiser ◽  
Bruce A. Pint
Keyword(s):  
Production Systems ◽  
Power Production ◽  
Model Alloy ◽  
Tracer Study ◽  
Protective Oxide ◽  
Scale Thickness ◽  
Low Levels ◽  
High Temperature Reactions ◽  
Ti Addition

AbstractSeveral modern power production systems utilize supercritical CO2 (sCO2), which can contain O2 and H2O as impurities. These impurities may degrade the compatibility of structural alloys through accelerated oxidation. However, it remains unclear which of these impurities plays a bigger role in high-temperature reactions taking place in sCO2. In this study, various model and commercial Fe‐ and Ni‐based alloys were exposed in 300 bar sCO2 at 750 °C to low levels (50 ppm) of O2 and H2O for 1,000 h. 18O-enriched water was used to enable the identification of the oxygen source in the post-exposure characterization of the samples. However, oxygen from the water did not accumulate in the scale, which consisted of Cr2O3 in the cases where a protective oxide formed. A 2wt.% Ti addition to a Ni-22%Cr model alloy resulted in the formation of thicker oxides in sCO2, while a 1wt.% Al addition reduced the scale thickness. A synergistic effect of both Al and Ti additions resulted in an even thicker oxide than what was formed solely by Ti, similar to observations for Ni-based alloy 282.

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