Absorption and index of refraction for the modeling of InGaAsP/InP photonic devices
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Methods for modeling, over an extended practical wavelength range, the index of refraction and the absorption in lattice-matched InGaAsP/InP-based photonic devices are reviewed, completed, and clarified. Carrier-induced effects on the optical properties are given special attention. For the index of refraction, the method gives results within 1% of the experimental ones. On the other hand, the results for absorption are more difficult to compare owing to the lack of experimental data.
2020 ◽
pp. 108-117
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1961 ◽
Vol 34
(2)
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pp. 588-599
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2014 ◽
Vol 137
(3)
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1911 ◽
Vol 15
(59)
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pp. 115-118
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