Investigation of interdiffusion in (SimGen)p superlattices and Gen buried layers by Raman and X-ray techniques
Two thin pseudomorphic (SimGen)p superlattices with m = n = 4 and p = 5 and vice versa were prepared at 350 °C by molecular beam epitaxy on (100) Si to investigate interdiffusion upon annealing. A Raman scattering and X-ray reflectometry study of the as-grown specimens indicated significant interdiffusion at the Si–Ge interfaces. The Raman investigations of specimens annealed for 20 s at temperatures up to 750 °C showed that atomic diffusion across the Si–Ge interfaces had occurred at an anneal temperature of 600 °C. After a 20 s 700 °C anneal. Raman and X-ray techniques showed that the superlattices modulation was destroyed consistent with a diffusion coefficient of about 10−21 m2/s. Both techniques revealed that 100 s anneals at temperatures of 750–950 °C introduced a slower diffusion rate (10−20 m2/s at 950 °C), but also strain relief, in Gen (n < 12) epilayers buried in Si. The differences in the effective diffusion rates for the two types of heterostructure are attributed to a different degree of interface mixing during growth.