Analytical microscopy of titanium nitride

1991 ◽  
Vol 69 (3-4) ◽  
pp. 290-297 ◽  
Author(s):  
M. Simard-Normandin ◽  
L. Weaver ◽  
D. Vacca ◽  
D. Rogers ◽  
A. Vitkin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Microelectronic Devices ◽  
Transmission Electron ◽  
Raman Microprobe ◽  
Scanning Tunnelling ◽  
Analytical Microscopy ◽  
Tunnelling Microscopy

We report on microscopy tools for the in-situ analysis of TiN in microelectronic devices. Scanning tunnelling microscopy and Raman microprobe spectroscopy are compared with scanning and transmission electron microscopy.

Step edge structures on the anatase TiO2 (001) surface studied by atomic-resolution TEM and STM

2018 ◽  
Vol 208 ◽  
pp. 325-338 ◽  
Author(s):  
M. Ek ◽  
I. Beinik ◽  
A. Bruix ◽  
S. Wendt ◽  
J. V. Lauritsen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Anatase Tio2 ◽  
Atomic Resolution ◽  
Oxide Surfaces ◽  
Side View ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Top View

Atomic arrangements in oxide surfaces can be uncovered by combining side view imaging using transmission electron microscopy and top view imaging using scanning tunnelling microscopy.

Growth of Graphene Layers on Silicon Carbide

2009 ◽  
Vol 615-617 ◽  
pp. 199-202 ◽  
Author(s):  
Wlodek Strupiński ◽  
Rafał Bożek ◽  
Jolanta Borysiuk ◽  
Kinga Kościewicz ◽  
Andrzej Wysmolek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Atomic Scale ◽  
Graphene Layers ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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