Electrical transport properties of CdSe thin-film transistors with Cr contacts

1991 ◽  
Vol 69 (3-4) ◽  
pp. 229-235
Author(s):  
David Waechter ◽  
Graham Leith ◽  
Stefan Zukotynski
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Gate Voltage ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Critical Distance ◽  
Electrical Transport Properties ◽  
Cdse Thin Film ◽  
Potential Barriers ◽  
Hall Effect Measurements

Electrical transport properties of CdSe thin-film transistors have been examined as a function of lateral distance from Cr contacts. The results show that the channel conductivity is enhanced in the vicinity of the contacts and drops sharply at a critical distance. The magnitude of this distance is sensitive to the surface treatment prior to CdSe deposition. Hall-effect measurements show an increasing electron mobility with increasing gate voltage, consistent with gate-voltage-induced lowering of grain-boundary potential barriers.

Thin Film Transistors Based on Alkylphenyl Quaterthiophenes:  Structure and Electrical Transport Properties

2007 ◽  
Vol 19 (6) ◽  
pp. 1355-1361 ◽  
Author(s):  
Sandra E. Fritz ◽  
Siddharth Mohapatra ◽  
Brian T. Holmes ◽  
Amelia M. Anderson ◽  
Cathal F. Prendergast ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Electrical Transport Properties

Study of structural and electrical transport properties of CaRuO3 bulk and thin film

2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 254 ◽  
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Vacancy Concentration ◽  
Operation Mode ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Oxygen Vacancy Concentration ◽  
Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

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