All-optical switching in a GaAs-based multiple quantum well directional coupler

1989 ◽  
Vol 67 (4) ◽  
pp. 408-411 ◽  
Author(s):  
B. P. Keyworth ◽  
M. Cada ◽  
J. M. Glinski ◽  
A. J. SpringThorpe ◽  
P. Mandeville
Keyword(s):  
Quantum Well ◽  
Optical Switching ◽  
Directional Coupler ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Planar Waveguides ◽  
Coupling Length ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching

The nonlinear, all-optical switching characteristics of a GaAs-based directional coupler are investigated. The structure consists of two Al0.18Ga0.82As planar waveguides coupled through a GaAs–AlGaAs multiple quantum well (MQW) layer. Changing the refractive index of the MQW layer, through a Kerr-type nonlinearity, varies the coupling length of the element, which in turn determines the distribution of optical power at the output of the sample. Our theoretical analysis of the element predicted that a strong nonlinear switching effect should be observed near the critical power, Pc, for samples cleaved to the appropriate length. This has been verified experimentally, for the first time with such a structure, and reveals a full-transfer coupling length of approximately 160 μm and a critical launched power of approximately 750 μW.

Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 815-821 ◽  
Author(s):  
Hiroyuki Uenohara ◽  
Yuichi Kawamura ◽  
Hidetoshi Iwamura ◽  
Kouji Nonaka ◽  
Hiroyuki Tsuda ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching ◽  
Operation Characteristics

Multiple Quantum Well Heterostructures Showing Optical Nonlinearities at Low Intensity and Fast Recovery

1998 ◽  
Vol 07 (01) ◽  
pp. 37-45 ◽  
Author(s):  
L. Gastaldi ◽  
C. Rigo ◽  
D. Campi ◽  
L. Faustini ◽  
C. Coriasso ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Optical Power ◽  
Guided Wave ◽  
Multiple Quantum ◽  
Photogenerated Carrier ◽  
Fast Recovery ◽  
All Optical ◽  
All Optical Switching

This paper focuses on photogenerated carrier nonlinearities in InGaAs/InAlAs quantum wells (QWs) that use low optical power, display a relatively fast recovery time (280 ps down to 35 ps), and excellent optical properties in terms of the sharpness of the absorption edge. A guided-wave, all-optical switching device is demonstrated as an application, at a wavelength which is of interest to telecommunication systems (1.55 μm) and requires low control energy (<0.3 pJ/pulse). A key issue here is that the controlled introduction of defects in the QW heterostructures allows the time response to be fastened significantly without being detrimental to the performance of the device in terms of on-off contrast and switching energy. The preparation procedure is compatible with metalorganic-based growth techniques widespread in optoelectronics at 1.55 μm.

All‐optical switching between modes of a GaAs/GaAlAs multiple quantum well waveguide

1988 ◽  
Vol 52 (24) ◽  
pp. 2013-2014 ◽  
Author(s):  
P. Li Kam Wa ◽  
P. N. Robson ◽  
J. S. Roberts ◽  
M. A. Pate ◽  
J. P. R. David
Keyword(s):  
Quantum Well ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching

A mechanism for low‐power all‐optical switching in multiple‐quantum‐well structures

1996 ◽  
Vol 69 (27) ◽  
pp. 4212-4214 ◽  
Author(s):  
C. Knorr ◽  
U. Wilhelm ◽  
V. Härle ◽  
D. Ottenwälder ◽  
F. Scholz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
All Optical ◽  
All Optical Switching
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