The study of carbon incorporation during growth in epitaxial indium antimonide layers prepared by metalorganic magnetron sputtering

1989 ◽  
Vol 67 (4) ◽  
pp. 298-303 ◽  
Author(s):  
T. Sudersena Rao ◽  
James B. Webb ◽  
J. P. Noad ◽  
J. Jackman
Keyword(s):  
Magnetron Sputtering ◽  
Indium Antimonide ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Methyl Radicals ◽  
Carbon Impurities ◽  
Background Impurity ◽  
Order Of Magnitude ◽  
Secondary Ion ◽  
Deposition Conditions

Secondary-ion mass spectrometry and Auger electron spectroscopy measurements combined with Hall data have indicated high levels of electrically active carbon impurities in InSb films grown by metalorganic magnetron sputtering. Background impurity concentrations in the range of 5 × 1018 cm−3 were observed for films grown at optimum deposition conditions. While it was also observed that the level of carbon in the layers decreased with increasing substrate temperature and V-III ratio, the addition of small amounts of molecular hydrogen (H2) to the sputtering gas resulted in an order of magnitude decrease in the carbon content of the as-grown InSb layers. Mass spectrometric studies suggest that the major source of carbon contamination in the layers is the methyl radicals produced from the pyrolysis of trimethylindium.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

IR and Sims Study of Hydrogen Diffusion in RF Sputter Deposited Boron Doped a-Si:H and Undoped a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
S. Mitra ◽  
X.-L. Wu ◽  
R. Shinar ◽  
J. Shinar
Keyword(s):  
Hydrogen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Stretch Vibration Band ◽  
Vibration Band ◽  
Boron Doped ◽  
Multiple Trapping ◽  
Stretch Vibration ◽  
Order Of Magnitude ◽  
Sputter Deposited ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectrometry (SIMS) and IR measurements of long range deuterium motion in rf sputter deposited (rf sp) p-doped a-Si:H and undoped a-Ge:H are compared to recently published results on undoped rf sp a-Si:H, which exhibited strongly power-law time dependent diffusion constants (exponent α= 0.75±0.1) in films of as-deposited content of di-H and tri-H bonds (usually associated with microvoids) Ndo –4–5 at.%. In pdoped a-Si:H samples where Ndo-l.8–3.8at.%, the diffusion is much faster, but the exponent is similar. In undoped a-Ge:H exhibiting a stretch vibration band indicative of mono-H bonding only, the diffusion is about one order of magnitude faster than in undoped a-Si:H, and α = 0.23. The results are discussed in relation to both the multiple trapping (dispersive) and defect mediated diffusion models.

Secondary-ion mass spectrometry and x-ray photo-electron spectroscopy analyses of -irradiated Bi-2212 superconductors

1996 ◽  
Vol 29 (11) ◽  
pp. 2745-2749 ◽  
Author(s):  
A Bhattacharyay ◽  
P Rajasekar ◽  
P Chakraborty ◽  
S K Bandyopadhyay ◽  
P Barat ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Comparison Of Aln Films Synthesized By Pulsed Laser Ablation And Magnetron Sputtering Techniques

1997 ◽  
Vol 505 ◽  
Author(s):  
K. Jagannadham ◽  
A. K. Sharma ◽  
Q. Wei ◽  
R. Kalyanraman ◽  
J. Narayan
Keyword(s):  
Magnetron Sputtering ◽  
Secondary Ion Mass Spectrometry ◽  
Pulsed Laser ◽  
Wear Test ◽  
Laser Deposition ◽  
Grinding Method ◽  
Transmission Electron ◽  
Infra Red ◽  
Bonding Characteristics ◽  
Secondary Ion

ABSTRACTA comparative study is reported on the aluminum nitride (AIN) films on Si (111) substrate deposited by pulsed laser deposition and reactive magnetron sputtering. The structure, bonding characteristics, relative impurity levels, and wear resistance have been investigated to compare these films. We have used the techniques such as high resolution transmission electron microscopy, Raman spectroscopy, fourier transform infra-red spectroscopy, secondary ion mass spectrometry, and crater grinding method for wear test, to delineate differences between these AIN films.

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