Low-absorption measurement of optical thin films using the photothermal surface-deformation technique

1988 ◽  
Vol 66 (7) ◽  
pp. 638-644 ◽  
Author(s):  
E. Welsch ◽  
H. G. Walther ◽  
P. Eckardt ◽  
Ton Lan
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Surface Deformation ◽  
Absorption Measurement ◽  
Deposition Parameters ◽  
Highly Sensitive ◽  
Bulk Absorption ◽  
Measuring Signal ◽  
Heating Beam

The purpose of this paper is to show both theoretically and experimentally the feasibility of the photothermal surface-deformation (PTD) technique for a highly sensitive, completely contactless detection, as well as a lateral and depth-resolved localization, of absorption in optical thin films. Peculiarities in the interpretation of the measuring signal, such as the influence of the thermal-expansion coefficient of the substrate and the focal diameter of the heating beam, have been pointed out.As a relevant example, the absorption of evaporated ZrO2, single layers on BK 7 substrates has been measured at λ = 515 nm. Their bulk absorption is shown to be strongly influenced by both deposition parameters and the baking procedure.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

Size- and temperature-dependent Young's modulus and size-dependent thermal expansion coefficient of thin films

2016 ◽  
Vol 18 (31) ◽  
pp. 21508-21517 ◽  
Author(s):  
Xiao-Ye Zhou ◽  
Bao-Ling Huang ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Material Properties ◽  
Essential Role ◽  
Young's Modulus ◽  
Temperature Dependent ◽  
Size Dependent

Surfaces of nanomaterials play an essential role in size-dependent material properties.

Highly Sensitive Temperature Sensor: Ligand‐Treated Ag Nanocrystal Thin Films on PDMS with Thermal Expansion Strategy

2019 ◽  
Vol 29 (32) ◽  
pp. 1903047 ◽  
Author(s):  
Junsung Bang ◽  
Woo Seok Lee ◽  
Byeonghak Park ◽  
Hyungmok Joh ◽  
Ho Kun Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Temperature Sensor ◽  
Expansion Strategy ◽  
Highly Sensitive

scholarly journals Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

2016 ◽  
Vol 168 ◽  
pp. 1144-1147 ◽  
Author(s):  
S. Thomas ◽  
A. Jovic ◽  
B. Morana ◽  
F. Buja ◽  
A. Gkouzou ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient

Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures

2000 ◽  
Vol 87 (9) ◽  
pp. 4189-4193 ◽  
Author(s):  
Haruna Tada ◽  
Amy E. Kumpel ◽  
Richard E. Lathrop ◽  
John B. Slanina ◽  
Patricia Nieva ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Silicon Dioxide ◽  
Thermal Expansion Coefficient ◽  
High Temperatures ◽  
Expansion Coefficient ◽  
Polycrystalline Silicon

scholarly journals Effect of Thermal Stresses Formed during Air Annealing of Amorphous Lanthanum Cuprate Thin Films Deposited on Silicon Substrate

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 613 ◽  
Author(s):  
Nolwenn Tranvouez ◽  
Philippe Steyer ◽  
Annie Malchère ◽  
Pascal Boulet ◽  
Fabien Capon ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Thermal Stresses ◽  
Environmental Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lift Off

Amorphous thin films of La–Cu–O deposited by magnetron sputtering have been annealed at different temperatures and in situ analyzed by X-ray diffraction. These experiments were useful to determine the crystallization temperature and to follow the crystallization process of the film. The in situ annealing X-ray diffraction analyses have been also used to determine the thermal expansion coefficient of La2CuO4 thin film. The estimated value is close to that obtained for a commercial powder. The thermal expansion coefficient value with additional environmental scanning electron microscopy observations explains the delamination origin that occurs during the annealing before the crystallization step. The buckling and delamination of the film observed is caused by the thermal expansion coefficient mismatch of the film and the substrate. During the heating step, the mismatch generates compressive stress at the film/substrate interface, causing the film to lift off and crack in the typical way.

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