Implantation ionique à haute énergie du Si dans l'AsGa

1987 ◽  
Vol 65 (8) ◽  
pp. 979-981
Author(s):  
A. Azelmad ◽  
J. F. Currie ◽  
A. Yelon ◽  
P. Sood
Keyword(s):  
Monte Carlo ◽  
Standard Deviation ◽  
Penetration Depth ◽  
Mass Spectroscopy ◽  
Monte Carlo Calculation ◽  
Ion Collisions ◽  
Rapid Annealing ◽  
Maximal Activation ◽  
Secondary Ion ◽  
Good Agreement

We present a study of the implantations of 7 MeV Si ions into GaAs at a dose of 1014 ions/cm2. The depth profile of the ions is measured by secondary-ion mass spectroscopy. It is found to be in good agreement with a Monte Carlo calculation based on the Lindhard, Scharff and Schiott model of ion collisions in solids. The penetration depth of the Si ions is Rp = 3.38 μm, with a standard deviation ΔRp = 0.35 μm. The samples are annealed in a rapid annealing oven. A maximal activation of dopants is obtained with a temperature of 850 °C for 20 s. The resistivity and average mobility after this anneal are ρ = 3.48 × 10−3 Ω∙cm and μn = 2800 cm2∙V−1∙s−1. This suggests that the majority of ions are activated.

SIMS Determination of MG+ and AS+ Range Profiles in Photoresist and Polyimide Implant Masks.

1989 ◽  
Vol 147 ◽  
Author(s):  
D. L. Dugger ◽  
M. B. Stern ◽  
T. M. Rubico
Keyword(s):  
Standard Deviation ◽  
Mass Spectroscopy ◽  
Range Data ◽  
Profile Data ◽  
Projected Range ◽  
Range Profile ◽  
P Type ◽  
Secondary Ion ◽  
Good Agreement

AbstractThe distribution of Mg+ (a p-type dopant for GaAs) and As+ (an p-type dopant for Si) implanted into both photoresist (PR) and polyimide (PI) have been determined experimentally. Range data of Mg ions at 200 keV and 300 keV and As ions at 150 keV have been measured by Secondary Ion Mass Spectroscopy (SIMS). SIMS values for the projected range Rp and the standard deviation ARp were compared to range profile data calculated using the Projected Range Algorithm (PRAL) of Biersack [1] as well as the standard LSS theory [2]. While the values for Rp calculated from the PRAL model generally agreed within 10% of the SIMS values, the calculations underestimated Rp for PR but were in good agreement for PI. The LSS calculations underestimated Rp in both materials.

Monte-Carlo-Rechnung für die Streuung von keV-Ionen an polykristallinen Stoffen / Monte-Carlo-Calculation for the Backscattering of keV-ions at Poly cry stalline Solids

1972 ◽  
Vol 27 (8-9) ◽  
pp. 1239-1246 ◽  
Author(s):  
G. Betz
Keyword(s):  
Monte Carlo ◽  
Reflection Coefficient ◽  
Penetration Depth ◽  
Random Distribution ◽  
Monte Carlo Calculation ◽  
Angle Of Incidence ◽  
Collision Model ◽  
Single Collision ◽  
Polycrystalline Solids ◽  
Good Agreement

Abstract Monte-Carlo-Calculation for the Backscattering of keV-ions at Poly cry stalline Solids Assuming a random distribution of the target atoms and taking account of electronic stopping too, the Monte-Carlo technique, based on a single collision model, was used to simulate the scat-tering of keV-ions at polycrystalline solids. The reflection coefficient, angular and energy distribu-tion and penetration depth of the reflected particles have been calculated for various ion-target combinations and energies. Furtheron, the angle of incidence of the primary beam was varied. Calculated values of the reflection coefficient and its dependence on angle of incidence are found in good agreement with experimental results. The percentage of particles scattered after a given number of collisions was also investigated. I. Einleitung Die Streuung von keV-Ionen an polykristallinen Festkörperoberflächen hat in den letzten Jahren gro-ßes Interesse gefunden, unter anderem auch als Me-thode zur Oberflächenanalyse 1 . Verschiedene Metho-den zur Berechnung der Streuung sehr leichter Ionen an Festkörperoberflächen wurden entwickelt 2-4 . Ausgehend von der LINDHARD-SCHARFF-SCHIÖTT-Theorie 5 über die Wechselwirkung von energetischen Ionen mit Festkörpern und den Berechnungen von WINTERBON et al. 6 haben BOTTIGER, DAVIES, SIG-MUND und WINTERBON 7 Streukoeffizienten für ver-schiedene Ion-Targetkombinationen aus Berechnun-gen über die Abbremsung von Ionen in einem un-endlich ausgedehnten, isotropen Medium erhalten.

Self-catalyzed Tritium Incorporation in Amorphous and Crystalline

2010 ◽  
Vol 1245 ◽  
Author(s):  
Baojun Liu ◽  
Nazir Kherani ◽  
Kevin P Chen ◽  
Tome Kosteski ◽  
Keith Leong ◽  
...  
Keyword(s):  
Penetration Depth ◽  
Mass Spectroscopy ◽  
Crystalline Silicon ◽  
Tritium Concentration ◽  
Exposure Condition ◽  
Material Microstructure ◽  
Tritium Content ◽  
Depth Profiles ◽  
Secondary Ion ◽  
Concentration Depth Profiles

AbstractTritiated amorphous and crystalline silicon is prepared by exposing silicon samples to tritium gas (T2) at various pressures and temperatures. Total tritium content and tritium concentration depth profiles in the tritiated samples are obtained using thermal effusion and Secondary Ion Mass Spectroscopy (SIMS) measurements. The results indicate that tritium incorporation is a function of the material microstructure rather than the tritium exposure condition. The highest tritium concentration attained in the amorphous silicon is about 20 at.% on average with a penetration depth of about 50 nm. In contrast, the tritium occluded in the c-Si is about 4 at.% with a penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is higher than reported results from post-hydrogenation experiments. The beta irradiation appears to catalyze the tritiation process and enhance the tritium dissolution in silicon material.

Growth of ion implanted buried FeSi2 on Si (111) and Si (100)

1991 ◽  
Vol 235 ◽  
Author(s):  
K. Radermacher ◽  
S. Mantl ◽  
Ch. Dieker ◽  
H. Holzbrecher ◽  
W. Speier ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Mass Spectroscopy ◽  
Peak Concentration ◽  
Rutherford Backscattering Spectrometry ◽  
Dose Dependence ◽  
High Dose ◽  
Depth Profiles ◽  
Si Substrates ◽  
Ion Channeling ◽  
Secondary Ion

ABSTRACTBuried FeSi2 layers have been fabricated by 200 keV Fe+ implantations into (111) and (100) Si substrates. By varying the dose from 0.4 to 7.1017 Fe+ cm−2 the dependence of the Fe concentration on ion dose was investigated systematically. The samples were characterized by Rutherford backscattering spectrometry, He+ ion channeling and secondary ion mass spectroscopy. In the as-implanted state the Fe peak concentration increases lineary with dose up to ≈2.4.1017 Fe+ cm−2. Above this dose a redistribution of Fe atoms was observed as indicated by comparison of measured depth profiles with Monte-Carlo simulations of high dose implantations. The Fe peak concentration shows an unusual dose dependence after rapid thermal annealing (RTA) at 1150°C for 10 s. A minimum dose of (2.4±0.1)1017 Fe+ cm−2 for (111) Si and a slightly higher dose of (2.7±0.1).1017 Fe+ cm−2 for (100) Si is necessary to form continuous metallic αFeSi2 layers.

Monte-Carlo Calculation of the Magnetocaloric Effect in Ni-Mn-Ga Alloys

2009 ◽  
Vol 152-153 ◽  
pp. 493-496 ◽  
Author(s):  
V.V. Sokolovskiy ◽  
Vasiliy D. Buchelnikov ◽  
Sergey Taskaev
Keyword(s):  
Monte Carlo ◽  
Magnetocaloric Effect ◽  
Magnetic Entropy Change ◽  
Monte Carlo Calculation ◽  
Three Dimensional ◽  
Entropy Change ◽  
Theoretical Description ◽  
Three Dimensional Model ◽  
Magnetic Field Variations ◽  
Good Agreement

The three-dimensional model for the theoretical description of the phase transformations and the magnetocaloric effect in shape – memory Heusler Ni2+xMn1-xGa alloys (x=0.18 – 0.27) with a coupled magnetostructural phase transition by the classical Monte Carlo method is proposed. It is shown that the isothermal magnetic entropy change upon magnetic field variations from 0 to 5 T and other magnetic properties are in good agreement with the available experimental data.

Magnetic Properties of Chromite ACr2S4 (A=Zn, Cd and Hg) Spinels: A Monte Carlo Study

SPIN ◽  
2018 ◽  
Vol 08 (04) ◽  
pp. 1850021
Author(s):  
A. El Maazouzi ◽  
R. Masrour ◽  
A. Jabar ◽  
M. Hamedoun
Keyword(s):  
Monte Carlo ◽  
Magnetic Properties ◽  
Nearest Neighbor ◽  
Monte Carlo Calculation ◽  
Magnetic Hysteresis ◽  
Three Dimensional ◽  
Exchange Interactions ◽  
Monte Carlo Study ◽  
Model Transition ◽  
Good Agreement

The magnetic properties of chromite ACr2S4 ([Formula: see text]n, Cd and Hg) spinels have been investigated. The first, second and the third nearest-neighbor exchange interactions are included into a Metropolis-based Monte Carlo calculation for the three-dimensional Ising model. Transition temperatures have been deduced from the variation of magnetizations and magnetic susceptibilities for three spinel systems. The magnetic hysteresis cycles have been deduced for three systems. Critical exponents associated with the magnetization, magnetic susceptibility and specific heat have been determined. Superparamagnetism behavior has been obtained below the transition temperature. The results of our simulations are in good agreement with other results.

Monte Carlo calculation of the energy parameters and spatial distribution of the cathodic arc ions while passing through the macro-particles filters

2018 ◽  
Vol 1 (1) ◽  
pp. 30-34 ◽  
Author(s):  
Alexey Chernogor ◽  
Igor Blinkov ◽  
Alexey Volkhonskiy
Keyword(s):  
Magnetic Field ◽  
Mass Transfer ◽  
Monte Carlo ◽  
Monte Carlo Calculation ◽  
Inhomogeneous Magnetic Field ◽  
Flow Energy ◽  
Wide Range ◽  
Field Concentrator ◽  
Cathodic Arc ◽  
The Magnetic Field

The flow, energy distribution and concentrations profiles of Ti ions in cathodic arc are studied by test particle Monte Carlo simulations with considering the mass transfer through the macro-particles filters with inhomogeneous magnetic field. The loss of ions due to their deposition on filter walls was calculated as a function of electric current and number of turns in the coil. The magnetic field concentrator that arises in the bending region of the filters leads to increase the loss of the ions component of cathodic arc. The ions loss up to 80 % of their energy resulted by the paired elastic collisions which correspond to the experimental results. The ion fluxes arriving at the surface of the substrates during planetary rotating of them opposite the evaporators mounted to each other at an angle of 120° characterized by the wide range of mutual overlapping.

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