Effect of electron bombardment during deposition of cadmium sulfide films using a hot-wall technique

1985 ◽  
Vol 63 (6) ◽  
pp. 712-715 ◽  
Author(s):  
A. Haque ◽  
A. E. Dixon ◽  
D. E. Brodie
Keyword(s):  
Dark Conductivity ◽  
Electron Bombardment ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Film Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Effect Measurements ◽  
Decoration Technique ◽  
Cds Films

The use of electron-beam irradiation combined with a hot-wall technique during deposition of CdS films is described. CdS films 2–10 μm thick were thermally deposited with and without electron bombardment on glass substrates using a hot-wall technique under a pressure greater than 1 × 10−6 Torr (1 Torr = 133.3 Pa). Film properties were studied using low-angle X-ray diffraction, scanning electron microscopy, optical microscopy using a chemical decoration technique, Hall-effect measurements, and temperature-dependent dark conductivity. The surface grain size varied from 2 to 5 μm and films were brownish orange with a smoky appearance.

Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences

2014 ◽  
Vol 28 (26) ◽  
pp. 1450210 ◽  
Author(s):  
Zhong Hua ◽  
Xiangcheng Meng ◽  
Yaming Sun ◽  
Wanqiu Yu ◽  
Dong Long
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Stacking Order ◽  
Microstructure Morphology ◽  
Hall Effect Measurements ◽  
Uv Visible

The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.

ZITO (ZnO-SnO2-In2O3 ) Transparent Conducting Oxides: Electrical and Optical Properties of DC Magnetron Sputtered Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Cleva Ow-Yang ◽  
Hyo-Yong Yeom ◽  
Burag Yaglioglu ◽  
David C. Paine
Keyword(s):  
Visible Spectral Region ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Conducting Oxides ◽  
Glass Substrates ◽  
Sputtered Films ◽  
Transparent Conducting ◽  
Hall Effect Measurements ◽  
Deposited Films

AbstractAmorphous ZITO films were deposited by dc magnetron sputtering onto glass substrates from ceramic oxide targets containing Zn:In:Sn cation ratios of 1:2:1 and 1:2:1.5. The microstructure, carrier density, mobility, and resistivity of as-deposited and annealed samples were evaluated using x-ray diffraction and Hall effect measurements. The as-deposited films were amorphous and remained so after annealing at 200°C in air for up to five hours. Transmissivity of the films exceeded 80% in the visible spectral region. The minimum resistivity value (7.6×10−4 Ω-cm) was obtained from thin films deposited using the 1:2:1 composition target and a substrate temperature of 300°C.

scholarly journals Structural, electrical and optical properties of CdS thin films and the effect of annealing on photoconductivity

2019 ◽  
Vol 12 (25) ◽  
pp. 138-147
Author(s):  
Haidar Jwad Abdul-Ameer Al-Rehamey
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Semiconductor ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the samples was determined from optical trasmittance spectra. It is observed that the direct band gap energy for as deposited and annealed films are (2.55, 2.45) eV, respectively. The effect of annealing at 250 oC for 1hr in air on optical and photoconductivity of films under various intensity of illuminations (43.81 and 115.12) mW/cm2 was studied. The dark and photocurrents of the annealed films were found to be greater than that of as deposited.

Preparation and Characterization of CdS by Evaporation and Cu2S Complex Photoelectric Thin Films

2012 ◽  
Vol 479-481 ◽  
pp. 133-136
Author(s):  
Sheng Nan Sun ◽  
Shi Liu ◽  
Feng Xu ◽  
Li Fen Cao ◽  
Jia Jia Cao ◽  
...  
Keyword(s):  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Cuprous Sulfide ◽  
Cds Film ◽  
Better Than ◽  
Complex Film ◽  
Cds Films

Cadmium sulfide (CdS) film by evaporation deposition and CdS/Cuprous sulfide (Cu2S) complex film by dipping were obtained on glass substrates. The influence of different annealing temperatures was investigated. Scanning electron microscopy (SEM) demonstrates CdS films are continuous, homogeneous. X-ray diffraction (XRD), photoluminescence (PL) and Raman spectra reveal the CdS films were hexagonal structure and 400°C is favor of the crystallization and aggregation. The conductivity of CdS/Cu2S complex film is better than that of CdS film.

scholarly journals Preparation and Characterization of Indium and Gallium doped Transparent ZnO Films for Solar Cell Applications

2018 ◽  
Vol 34 (5) ◽  
pp. 2325-2331
Author(s):  
Reuben Seth Richter ◽  
A. Yaya ◽  
D. Dodoo-Arhin ◽  
B. Agyei-Tuffour ◽  
Robinson Juma Musembi ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Spray Pyrolysis Deposition ◽  
Hall Effect Measurements

In this work, the effect of indium (In) and gallium (Ga) dopants on the structural, optical and electrical properties of ZnO thin films was studied. ZnO thin films were deposited on glass substrates at 400°C using the spray pyrolysis deposition technique. X-ray diffraction (XRD) results indicated that both undoped and doped ZnO films had (002) preferred orientation. The undoped ZnO films were found to exhibit high transmittance above 80%, while indium-doped (In:ZnO) and gallium-doped (Ga:ZnO) films had transmittance above 60% and 70% respectively. From the Hall Effect measurements, doping improved the conductivity of the ZnO thin films however, In:ZnO films showed higher electrical conductivity compared to Ga:ZnO films. Electron probe microanalysis (EPMA) results were used to confirm the presence of the respective dopants in the thin film samples.

InP Layers Grown by Molecular Beam Epitaxy at Low Substrate Temperature

1991 ◽  
Vol 241 ◽  
Author(s):  
K. Xie ◽  
C. R. Wie ◽  
G. W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Double Crystal ◽  
X Ray ◽  
Hall Effect Measurements ◽  
Phosphorus Source ◽  
Substrate Temperatures

ABSTRACTInP layers were grown on semi-insulating InP wafer by molecular beam epitaxy (MBE) at low substrate temperatures (<200° C), using solid phosphorus source. We use x-ray diffraction, double crystal x-ray rocking curve, Auger electron spectroscopy, and temperature-dependent Van der Pauw and Hall effect measurements to characterize the as-grown and annealed InP layers. It is found that the InP layer is in poly-crystal state with excess P over 7 at%. The layers became single crystal after annealing above 400°C. The resistivity of the InP layer decreased from 60 Ωcm for an as-grown sample to 0.82 Ωcm after 400°C RTA annealing. The different role of excess P as compared to the role played by excess As in LT-GaAs is discussed based on the P properties.

The Role of Sputter Pressure in Influencing Electrical and Optical Properties of ITO on Glass

2010 ◽  
Vol 1256 ◽  
Author(s):  
Shereen Elhalawaty ◽  
Karthik Sivaramakrishnan ◽  
Theodore David ◽  
Terry L Alford
Keyword(s):  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Visible Spectrum ◽  
Rf Magnetron Sputtering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Effect Measurements

AbstractThin layers of indium tin oxide (ITO) were deposited onto glass substrates by RF magnetron sputtering with the pressure varying from 6 mTorr to 15 mTorr. The films were annealed in a reducing atmosphere at 500 °C for 30 minutes. Sheet resistance was determined by four-point-probe measurement. Resistivity, mobility, and carrier concentration were obtained by Hall effect measurements. Transmission of the films in the visible spectrum was determined by photospectrometry. The structure of the films was characterized by X-ray diffraction. X-ray photoelectron spectroscopy was used to determine the oxidation state of Sn, which was used to determine the fraction of active tin clusters. The effect of additional anneals was investigated. The results reveal that the lowest resistivity obtained was 1.69×10-4 -cm at 9 mTorr and the highest transmittance of 90% was obtained after a second anneal. However, the second anneal decreased the mobility and conductivity for high sputter pressures.

scholarly journals Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

2018 ◽  
Vol 36 (3) ◽  
pp. 364-369
Author(s):  
M. Abbas ◽  
N. A. Shah ◽  
K. Jehangir ◽  
M. Fareed ◽  
A. Zaidi
Keyword(s):  
High Vacuum ◽  
X Ray Diffraction ◽  
Thermal Vacuum ◽  
X Ray ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Large Particles ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
Substrate Temperatures

AbstractZinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

Structural and Optical Properties of CdS Thin Films Grown by Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Sizes ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.

Electrodeposition of Cu2O Particles by Using Electrolyte Solution Containing Glucopone as Surfactant

2009 ◽  
Vol 1 (2) ◽  
pp. 18-20
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Indium Tin Oxide ◽  
Pulse Current ◽  
Platinum Electrode ◽  
Saturated Calomel Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Continuous Current ◽  
Oxide Particles ◽  
Cupric Sulphate

Copper oxide particles were electrodeposited onto indium tin oxide (ITO) coated glass substrates. Electrodeposition was carried out in the electrolyte containing cupric sulphate, boric acid and glucopone. Both continuous and pulse currents methods were used in the process with platinum electrode, saturated calomel electrode (SCE) and ITO electrode as the counter, reference and working electrode respectively. The deposited particles were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that, using continuous current deposition, the deposited particles were mixture of Cu2O and CuO particles. By adding glucopone in the electrolyte, particles with spherical shapes were produced. Electrodeposition by using pulse current, uniform cubical shaped Cu2O particles were produced

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