Electrical conduction in granular Cu–SiO2 films
Keyword(s):
We have measured the temperature dependence of the electrical resistivity ρ of Cu – SiO2 co-sputtered films in the range 4–300 K for metal volume fractions between 0.5 – 0.8. The films range between the metallic (ρ ~ T) and "strongly-localized" (log ρ ~ T−1/2) regimes. In the intermediate regime we find a complex behaviour for ρ(T) with a concentration dependent local minimum that separates the low temperature ρ ~ log T and the high temperature ρ ~ T behaviour. We attribute this to temperature dependent localization of electrons.
2016 ◽
Vol 231
(4)
◽
pp. 444-454
◽
1969 ◽
Vol 24
(2)
◽
pp. 200-205
◽
2021 ◽
Vol 236
(1-2)
◽
pp. 33-41
2016 ◽
Vol 72
(12)
◽
pp. 971-980
◽