Electron transport and conduction band structure of GaSb

1981 ◽  
Vol 59 (12) ◽  
pp. 1844-1850 ◽  
Author(s):  
Hyung Jae Lee ◽  
John C. Woolley
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Electrical Conductivity ◽  
Conduction Band ◽  
Room Temperature ◽  
Energy Gap ◽  
Band Model ◽  
Scattering Coefficients ◽  
Wide Range ◽  
Different Temperatures

Calculations have been made using the Fletcher and Butcher method in a three conduction band model to fit a wide range of experimental transport data for n-type samples of GaSb: viz. Hall coefficient and electrical conductivity as a function of temperature and as a function of pressure at room temperature, magnetoresistance as a function of magnetic field at different temperatures, and Nernst–Ettingshausen coefficients as a function of magnetic field. Various energy gap parameters and scattering coefficients have been taken as adjustable and values determined for these which give good fits to all of the experimental data. Values of mobility for each of the Γ, L, and X bands have then been calculated as a function of temperature.

Oscillatory non-resonant interband Faraday rotation in InSb and PbTe—a new magneto-optical effect

1971 ◽  
Vol 321 (1546) ◽  
pp. 303-320 ◽  
Keyword(s):  
Magnetic Field ◽  
Conduction Band ◽  
Field Dependence ◽  
Faraday Rotation ◽  
Magnetic Field Dependence ◽  
Energy Gap ◽  
Landau Levels ◽  
Wide Range ◽  
Magneto Optical Effect ◽  
The Magnetic Field

Oscillations in the magnetic field dependence of interband Faraday rotation in degenerate samples of InSb and PbTe at low temperatures have been observed for photons having a wide range of energies which are less than that corresponding to the forbidden energy gap. These oscillations are attributed to the imbalance of contributions from right and left circularly polarized modes to the total rotation, caused by the blocking of certain interband absorptions by conduction-band electrons. The perturbing effect of the variation of carrier concentration is used as an experimental variable. The relative strengths of the oscillations have been reasonably well accounted for by analysis of the interband selection rules and transition strengths given by a theory due to Boswarva & Lidiard. The positions of the oscillations, which depend on the population of Landau levels in the conduction band, have a reciprocal magnetic field dependence as for the de Haas-van Alphen effect, and have yielded quantitative determinations of energy-band parameters.

scholarly journals The change of electrical conductivity in strong magnetic fields. Part I. —Experimental results

1929 ◽  
Vol 123 (791) ◽  
pp. 292-341 ◽  
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Magnetic Fields ◽  
Room Temperature ◽  
Linear Part ◽  
Strong Magnetic Fields ◽  
Other Substances ◽  
Different Temperatures ◽  
Weak Fields ◽  
The Magnetic Field

In a recent paper the author described experiments on the change of resistance of bismuth crystals in magnetic fields up to 300,000 gauss. In agreement with previous investigators it was found that the resistance of bismuth in weak fields increases in proportion to the square of the magnetic field, and in stronger fields follows a linear law, the increase of resistance being proportional to the magnetic field up to fields of 300 kilogauss. It was further found that this linear part of the change of resistance is, in most cases, independent of the orientation of the crystal in the magnetic field, and also of the degree of perfection of the crystal. This suggests that we are concerned with an atomic phenomenon. On studying several other substances it was found that the increase of resistance, although on a much smaller scale, is similar to that observed in bismuth, following first the square law and in fields above 60 to 100 kilogauss a linear law. This has led to a systematic study of the elements throughout the periodic table. About 35 different metals have been investigated at different temperatures, varying from room temperature to the temperature of liquid nitrogen, and the law of change of resistance mentioned above is found to be general for all.

scholarly journals Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics

2020 ◽  
Vol 6 (3) ◽  
pp. 113-123
Author(s):  
Arnold S. Borukhovich
Keyword(s):  
Magnetic Field ◽  
Solid Solution ◽  
Composite Material ◽  
High Temperature ◽  
External Magnetic Field ◽  
Room Temperature ◽  
Spin Electronics ◽  
Wide Range ◽  
Semiconductor Spintronics ◽  
Europium Monoxide

The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

On Electrical Conductivity Measurements of Molten Metals by Inductive Technique

2004 ◽  
Vol 126 (3) ◽  
pp. 468-470 ◽  
Author(s):  
Sayavur I. Bakhtiyarov ◽  
Mihai Dupac ◽  
Ruel A. Overfelt ◽  
Sorin G. Teodorescu
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Electrical Conductivity ◽  
Fluid Flow ◽  
External Magnetic Field ◽  
Electric Conductivity ◽  
Molten Metals ◽  
Conductivity Measurements ◽  
Permanent Magnetic Field ◽  
Rotating Liquid

In this paper, we propose a new relationship between the opposing mechanical torque and the electric conductivity of a rotating liquid specimen in a permanent external magnetic field of constant induction, which includes the effect of fluid flow. The proposed relationship was applied to describe the experimental data for a conductive specimens rotating in a permanent magnetic field.

Fluid Flow Effect in Electrical Conductivity Measurements of Molten Metals by Inductive Technique

2002 ◽  
Author(s):  
Sayavur I. Bakhtiyarov ◽  
Mihai Dupac ◽  
Ruel A. Overfelt ◽  
Sorin G. Teodorescu
Keyword(s):  
Magnetic Field ◽  
Experimental Data ◽  
Electrical Conductivity ◽  
Fluid Flow ◽  
External Magnetic Field ◽  
Electric Conductivity ◽  
Molten Metals ◽  
Conductivity Measurements ◽  
Permanent Magnetic Field ◽  
Rotating Liquid

In this paper we propose a new relationship between the opposing mechanical torque and the electric conductivity of a rotating liquid specimen in a permanent external magnetic field of constant induction, which includes the effect of fluid flow. The proposed relationship was applied to describe the experimental data for a conductive specimen rotating in a permanent magnetic field.

Electron effective mass values in GaAsxSb1−x alloys

1981 ◽  
Vol 59 (7) ◽  
pp. 939-944 ◽  
Author(s):  
Paul Devlin ◽  
Hassan M. Heravi ◽  
John C. Woolley
Keyword(s):  
Experimental Data ◽  
Effective Mass ◽  
Conduction Band ◽  
Faraday Rotation ◽  
Room Temperature ◽  
Electron Effective Mass ◽  
Kane Model ◽  
Experimental Variation ◽  
Infra Red ◽  
Best Fit

Measurements of Faraday rotation and of infra-red plasma reflectance have been made at room temperature on n-type polycrystalline samples of GaASxSb1−x alloys. Hence effective mass values m00* for the bottom of the (000) conduction band have been determined. The experimental variation of m00* with x is compared with the predictions of various models, viz., (a) a simple Kane model, (b) the model proposed by Berolo et al., and (c) the model proposed by Hermann and Weisbuch. It is found that the model of Berolo et al. gives the best fit to the experimental data.

Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current

1994 ◽  
Vol 336 ◽  
Author(s):  
T. Globus ◽  
H. C. Slade ◽  
M. Shur ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Energy Gap ◽  
Localized States ◽  
Flat Band ◽  
Gate Bias ◽  
Density Of Localized States ◽  
Wide Range

ABSTRACTWe have measured the current-voltage characteristics of amorphous silicon thin film transistors (a-Si TFTs) over a wide range of temperatures (20 to 160°C) and determined the activation energy of the channel current as a function of gate bias with emphasis on the leakage current and subthreshold regimes. We propose a new method for estimating the density of localized states (DOS) from the dependence of the derivative of activation energy with respect to gate bias. This differential technique does not require knowledge of the flat-band voltage (VFB) and does not incorporate integration over gate bias. Using this Method, we have characterized the density of localized states with energies in the range 0.15–1.2 eV from the bottom of the conduction band and have found a wide peak in the DOS in the range of 0.8–0.95 eV below the conduction band. We have also observed that the DOS peak in the lower half of the bandgap increases in magnitude and shifts towards the conduction band as a result of thermal and bias stress. We also measured an overall increase in the DOS in the upper half of the energy gap and an additional peak, centered at 0.2 eV below the conduction band, which appear due to the applied stress. These results are in qualitative agreement with the defect pool Model [1,2].

scholarly journals Drying and rehydration of oyster mushroom

2010 ◽  
Vol 53 (4) ◽  
pp. 945-952 ◽  
Author(s):  
Giannini Pasiznick Apati ◽  
Sandra Aparecida Furlan ◽  
João Borges Laurindo
Keyword(s):  
Experimental Data ◽  
Relative Humidity ◽  
Pleurotus Ostreatus ◽  
Water Sorption ◽  
Room Temperature ◽  
Sorption Isotherms ◽  
Moisture Sorption ◽  
Fruiting Bodies ◽  
Different Temperatures ◽  
Water Sorption Isotherms

Dehydration and rehydration processes of Pleurotus ostreatus fruiting bodies were investigated in this work. Mushroom samples were dehydrated at 40, 50 and 60 ºC, using drying air with relative humidity of 75 %. The rehydration was investigated at different temperatures of immersion water (25, 55 and 85 ºC) and different immersion times (30, 75 and 120 minutes). The best rehydration occurred for the samples dried at 40 ºC. The rehydration could be done in water at room temperature, during 30 minutes. Water sorption isotherms of samples were determined at 30, 40 and 50 ºC. Both GAB and BET models satisfactorily represented the experimental data of moisture sorption of dried mushrooms.

Transmission spectra of silver intercalated 2H-TaS2 and 1T-TiS2

1983 ◽  
Vol 61 (7) ◽  
pp. 965-970 ◽  
Author(s):  
G. A. Scholz ◽  
R. F. Frindt
Keyword(s):  
Charge Transfer ◽  
Energy Range ◽  
Conduction Band ◽  
Room Temperature ◽  
Direct Method ◽  
Silver Ions ◽  
Silver Cation ◽  
Band Model ◽  
Transmission Spectra ◽  
A Direct Method

The room temperature transmission spectra of Agx TaS2 and Agx TiS2 have been measured in the energy range from about 1.3 to 2.8 eV for various values of x. A rigid band model, where charge transfer from the silver cation to the lowest d conduction band of the host macro-anion occurs, can explain the changes in the spectra. These changes in the transmission spectra provide a direct method for monitoring staging and the intercalation rate of the silver ions.

Magnetotransport phenomena in layered conductors under magnetic breakdown

2017 ◽  
Vol 31 (14) ◽  
pp. 1750114
Author(s):  
O. Galbova ◽  
V. G. Peschansky ◽  
D. I. Stepanenko
Keyword(s):  
Magnetic Field ◽  
Electrical Conductivity ◽  
Energy Spectrum ◽  
Hydrostatic Pressure ◽  
Fermi Surface ◽  
Linear Dependence ◽  
Energy Gap ◽  
Electron Energy Spectrum ◽  
External Effects ◽  
Magnetic Breakdown

We study the transport phenomena in layered conductors with rather general electron energy spectrum placed in a high magnetic field [Formula: see text], under conditions when the distance between various sheets of the Fermi surface (FS) may become small under the external effects, such as hydrostatic pressure or impurity atom doping, and electrons can transfer from one sheet of the FS to another due to magnetic breakdown. We calculate the dependence of the in-plane electrical conductivity and magnetoresistance on magnetic field and probability of magnetic breakdown and show that the field-induced quadratic increase of the in-plane resistance in the absence of magnetic breakdown is changed by a linear dependence on [Formula: see text]. With a further reduction of the energy gap between FS sheets, the in-plane resistance is saturated.

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