Rotational temperature variations in pulsating auroras

1981 ◽  
Vol 59 (8) ◽  
pp. 1143-1149 ◽  
Author(s):  
R. A. Koehler ◽  
M. M. Shepherd ◽  
G. G. Shepherd ◽  
K. V. Paulson
Keyword(s):  
Energy Distribution ◽  
Electron Energy ◽  
Computer Modelling ◽  
Rotational Temperature ◽  
Temperature Variations ◽  
Morphological Studies ◽  
Modelling Techniques ◽  
Rocket Measurements

A ground-based, two channel photometer was used to derive rotational temperatures for the 4278 Å band of N2+ during the 1980 Canadian pulsating aurora campaign. Characteristic electron energies of a Maxwellian energy distribution were inferred from the rotational temperatures using computer modelling techniques. Height and electron energy fluctuations, calculated for a pulsating auroral event on February 15, 1980, are compared with ground-based ionosonde and in situ rocket measurements. The results indicate the potential of conducting electron energy morphological studies from the ground. Systematic rotational temperature variations were found to accompany each of the well-defined pulsations studied.

MEASUREMENT OF THE ELECTRON ENERGY DISTRIBUTION IN A CO2LASER PLASMA

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-385-C7-386
Author(s):  
S. Bourquard ◽  
J. M. Mayor ◽  
P. Kocian
Keyword(s):  
Energy Distribution ◽  
Electron Energy ◽  
Electron Energy Distribution

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

Photoluminescence Enhancement of CdS Nanocrystals Fabricated on Dithiocarbamate Functionalized PET Substrates

2012 ◽  
Vol 512-515 ◽  
pp. 1511-1515
Author(s):  
Chun Lin Zhao ◽  
Li Xing ◽  
Xiao Hong Liang ◽  
Jun Hui Xiang ◽  
Fu Shi Zhang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Hexagonal Structure ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Visible Absorption ◽  
X Ray ◽  
Cds Nanocrystals ◽  
Morphological Studies ◽  
Transmission Electron

Cadmium sulfide (CdS) nanocrystals (NCs) were self-assembled and in-situ immobilized on the dithiocarbamate (DTCs)-functionalized polyethylene glycol terephthalate (PET) substrates between the organic (carbon disulfide diffused in n-hexane) –aqueous (ethylenediamine and Cd2+ dissolved in water) interface at room temperature. Powder X-ray diffraction measurement revealed the hexagonal structure of CdS nanocrystals. Morphological studies performed by scanning electron microscopy (SEM) and high-resolution transmission electron microscope (HRTEM) showed the island-like structure of CdS nanocrystals on PET substrates, as well as energy-dispersive X-ray spectroscopy (EDS) confirmed the stoichiometries of CdS nanocrystals. The optical properties of DTCs modified CdS nanocrystals were thoroughly investigated by ultraviolet-visible absorption spectroscopy (UV-vis) and fluorescence spectroscopy. The as-prepared DTCs present intrinsic hydrophobicity and strong affinity for CdS nanocrystals.

Electron energy distribution in photolytically pumped lasers

1981 ◽  
Vol 38 (1) ◽  
pp. 1-3 ◽  
Author(s):  
W. L. Morgan ◽  
R. D. Franklin ◽  
R. A. Haas
Keyword(s):  
Energy Distribution ◽  
Electron Energy ◽  
Electron Energy Distribution

In Situ Analysis of Surface Contaminant Desorption during Low-Temperature Silicon Substrate Cleaning using Reflection Electron Energy Loss Spectrometry

1992 ◽  
Vol 259 ◽  
Author(s):  
Selmer S. Wong ◽  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Aimee L. Smith ◽  
Harry A. Atwater
Keyword(s):  
Low Temperature ◽  
Energy Loss ◽  
Electron Energy ◽  
Core Loss ◽  
Temperature Dependent ◽  
Electron Energy Loss Spectrometry ◽  
Analysis Technique ◽  
Chemical Analysis Technique ◽  
Electron Energy Loss

ABSTRACTWe have employed reflection electron energy loss spectrometry (REELS), a surface chemical analysis technique, in order to analyze contaminant coverages at the submonolayer level during low-temperature in situ cleaning of hydrogen-terminated Si(100). The chemical composition of the surface was analyzed by measurements of the C K, O K and Si L2,3 core loss intensities at various stages of the cleaning. These results were quantified using SiC(100) and SiO2 as reference standards for C and O coverage. Room temperature REELS core loss intensity analysis after sample insertion reveals carbon at fractional monolayer coverage. We have established the REELS detection limit for carbon coverage to be 5±2% of a monolayer. A study of temperature-dependent hydrocarbon desorption from hydrogen-terminated Si(100) reveals the absence of carbon on the surface at temperatures greater than 200°C. This indicates the feasibility of epitaxial growth following an in situ low-temperature cleaning and also indicates the power of REELS as an in situ technique for assessment of surface cleanliness.

Evolution of a nonthermal electron energy distribution in GaAs

1992 ◽  
Vol 45 (19) ◽  
pp. 10979-10989 ◽  
Author(s):  
D. W. Snoke ◽  
W. W. Rühle ◽  
Y.-C. Lu ◽  
E. Bauser
Keyword(s):  
Energy Distribution ◽  
Electron Energy ◽  
Nonthermal Electron ◽  
Electron Energy Distribution
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