Photoluminescence in heavily-doped Si(P)

1978 ◽  
Vol 56 (7) ◽  
pp. 814-826 ◽  
Author(s):  
R. R. Parsons
Keyword(s):  
Photoluminescence Spectrum ◽  
Dopant Concentration ◽  
Impurity Band ◽  
Excitation Level ◽  
Excitation Threshold ◽  
Threshold Behaviour ◽  
Band Emission ◽  
Luminescence Peak ◽  
Heavily Doped ◽  
First Time

The photoluminescence spectrum of heavily doped Si(P) has been studied as a function of temperature, excitation level, and impurity concentration. Several new results are observed for the first time, which include: (i) a narrowing of the impurity band luminescence peak when the temperature is increased to about T = 15 K, (ii) a sudden disappearance of the impurity band emission at a certain temperature determined by the dopant concentration, and (iii) an excitation threshold behaviour for the luminescence observed at high excitation level.A new model is introduced to explain the data. In this model, the impurity band undergoes a localized-to-delocalized transition due to a sufficiently large concentration of photocreated carriers.

X-ray standing wave investigations of Si dopant incorporation in GaN

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael Siebert ◽  
Th. Schmidt ◽  
J. I. Flege ◽  
J. Zegenhagen ◽  
T.-L. Lee ◽  
...  
Keyword(s):  
Dopant Concentration ◽  
Specific Data ◽  
X Ray ◽  
Site Distribution ◽  
Sapphire Substrates ◽  
Dopant Incorporation ◽  
Radiation Technique ◽  
Si Doped ◽  
Sample Structure ◽  
First Time

AbstractThe synchrotron radiation technique of x-ray standing waves (XSW), which allows to directly obtain structural and element-specific data, was successfully used for the investigation of the dopant site distribution in Si doped GaN films grown on (0001) sapphire substrates for the first time. The Si dopant concentration was chosen to 5×1018 cm-3 and 5×1019 cm-3. The measurements were performed on 300 nm thin doped films deposited on high-quality thick undoped GaN films. With this sample structure, influences of the Si dopant induced decrease of the crystalline quality on the XSW signal are suppressed. The XSW data are compared to those obtained from thick homogeneously doped GaN films. All XSW measurements were performed in (002) backscattering geometry. Independent of the dopant concentration, the results indicate that Si atoms are solely incorporated on substitutional Ga sites.

Excitation Density Dependent Photoluminescence Studies on Homo-Epitaxial GaN Nanowall Networks Grown by Laser Assisted Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3866-3872
Author(s):  
Ch. Ramesh ◽  
J. Pandey ◽  
P. Tyagi ◽  
A. Soni ◽  
M. Senthil Kumar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Density ◽  
Density Dependent ◽  
Band Emission ◽  
Luminescence Peak ◽  
Photoluminescence Studies ◽  
Gan Film

The optical properties of laser-assisted molecular beam epitaxy grown homo-epitaxialGaN nanowall networks (NWNs) were investigated using power dependent photoluminescence (PL) spectroscopy and compared with homo-epitaxial GaN thin film. The pore size and tip width of GaN NWN sample is ˜120–180 nm and 10–15 nm, respectively. The ultraviolet-visible spectroscopy study shows that the GaN NWNs have low optical light reflection and minimum Fabry-Perot cavity effect than GaN film. The room temperature PL spectroscopy reveals that the GaN NWNs possesses enhanced band gap of 3.51 eV with blue shift of 90 meV than the GaN film (3.42 eV). The excitation density dependent PL spectroscopy measurements reveal that the GaN NWNs nanowall and near band emission (NBE) peak position and its linewidth invariant. The intensity of NBE peak for GaN film and nanowalls varies linearly whereas NBE to defect related yellow luminescence peak intensity ratio shows a non-linear variation on the excitation density. The excitation density in PL measurements plays a key role when the sample quality compared on the basis of PL data.

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Effect of dopant concentration on the spectroscopic properties in an In3+ doped (0, 1, 2 and 4 mol%) Yb:Tm:LiNbO3 crystal

RSC Advances ◽  
2015 ◽  
Vol 5 (46) ◽  
pp. 36385-36389 ◽  
Author(s):  
Li Dai ◽  
Zhehua Yan ◽  
Shanshan Jiao ◽  
Chao Xu ◽  
Yuheng Xu
Keyword(s):  
Dopant Concentration ◽  
Spectroscopic Properties ◽  
Czochralski Technique ◽  
First Time

A series of Yb:Tm:LiNbO3 crystals with x mol% In3+ ions (x = 0, 1,2 and 4 mol%) were grown by a conventional Czochralski technique for the first time.

Application Of Room-Temperature Photoluminescence For Characterizing Thermally Processed Cz Silicon Wafers

2002 ◽  
Vol 719 ◽  
Author(s):  
F. Kirscht ◽  
B. Orschel ◽  
S. Kim ◽  
S. Rouvimov ◽  
B. Snegirev ◽  
...  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Dopant Concentration ◽  
Room Temperature Photoluminescence ◽  
Oxygen Precipitation ◽  
Device Processing ◽  
Sample Spectrum ◽  
Thermally Processed ◽  
Heavily Doped ◽  
Silicon Materials

AbstractPL studies of oxygen precipitation related defects, stress relaxation related defects and doping striations in various silicon materials are presented. The sample spectrum includes a variety of dopant species, and the dopant concentration range covers several 1014 cm-3 to several 1019 cm-3. Lightly doped, precipitation-annealed polished wafers were intentionally contaminated with Fe, Ni and Cu. Several types of epi wafers based on heavily doped substrates have been investigated after full device processing. PL intensity in the investigated doping concentration range is controlled by three basic recombination mechanisms: radiative recombination competing with multi phonon Shockley-Read-Hall (SRH) and Auger recombination. SRH recombination is the major competing mechanism at low dopant concentration, and Auger recombination becomes important at increasing doping levels. Even though not yet fully understood, the PL technique applied in this study has generated practically useful results.

HEAVILY DOPED HARMONIC CONFINED QUANTUM WIRES

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Gate Voltage ◽  
Quantum Wires ◽  
Impurity Band ◽  
Semiconductor Heterostructures ◽  
One Dimensional ◽  
Impurity Density ◽  
Heavily Doped

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.

THE HOT CARRIER TEMPERATURE AND THE IMPURITY BAND IN KANE'S THEORY FOR HEAVILY DOPED SEMICONDUCTOR PHOTOLUMINESCENCE ANALYSIS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 692-695
Author(s):  
G. FONTHAL ◽  
L. E. TOBÓN ◽  
J. QUINTERO ◽  
N. PIRAQUIVE ◽  
H. ARIZA-CALDERÓN
Keyword(s):  
Urbach Energy ◽  
Impurity Band ◽  
High Energy ◽  
Hot Carrier ◽  
New Information ◽  
Carrier Temperature ◽  
Heavily Doped ◽  
Experimental Values ◽  
Fitting Parameters ◽  
Topological Disorder

We analyzed the photoluminescence (PL) spectra on heavily doped GaAs:Sn samples by Kane's theory including a Lorentzian, a Gaussian and the hot carrier temperature. The band gap, the Fermi level, and the Urbach tail were the fitting parameters. Good results were obtained when the theoretical and experimental values were compared for the three parameters. The Urbach energy magnitude and the topological disorder parameter increased when the impurity concentration augment. The average phononic participation was very close with the tabulated values. New information about a shoulder in the high energy side was obtained, too.

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

2015 ◽  
Vol 242 ◽  
pp. 10-14 ◽  
Author(s):  
Ludwig Stockmeier ◽  
Mohamed Elsayed ◽  
Reinhard Krause-Rehberg ◽  
Markus Zschorsch ◽  
Lothar Lehmann ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Dopant Concentration ◽  
Temperature Dependent ◽  
Clear Trend ◽  
Dependent Effect ◽  
Positron Annihilation Lifetime ◽  
Czochralski Silicon ◽  
As Doping ◽  
Heavily Doped ◽  
Doping Range

To determine the electrically inactive fraction of As or P in heavily doped as-grown Czochralski Si 4-point resistivity and SIMS measurements were carried out. No clear trend for the electrical inactive fraction was found with an increasing dopant concentration, though a mean electrical inactive fraction of 11.5% for As doping could be determined.Experimental results on a dopant-vacancy complex in as-grown Si are scarce, hence temperature-dependent positron annihilation lifetime spectroscopy (PALS) was carried out on several heavily As and P doped as-grown Si samples. The measured average positron annihilation lifetime τav is between 218 ps and 220 ps. No temperature dependent effect on τav could be observed. Therefore, it can be concluded that in the studied doping range the dopant-vacancy complexes do not exist. The reason for the inactivation of the dopant has to be found elsewhere. A possible explanation can be the formation of dopant precipitates.

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